Interface roughness effect between gate oxide and metal gate on dielectric property

Chemical Compounds

• Interface Roughness 100%
• Dielectric Property 57%
• Leakage Current 37%
• Physical Vapour Deposition 37%
• Atomic Layer Epitaxy 33%
• Oxide 31%
• Dielectric Constant 26%
• Metal 25%
• Dielectric Material 12%

Engineering & Materials Science

• Dielectric properties 69%
• Oxides 49%
• Surface roughness 47%
• Atomic layer deposition 44%
• Metals 36%
• Physical vapor deposition 35%
• Leakage currents 30%
• Permittivity 28%

Physics & Astronomy

• dielectric properties 47%
• roughness 47%
• oxides 35%
• metals 29%
• atomic layer epitaxy 19%
• leakage 15%
• vapor deposition 14%
• permittivity 13%