Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors

Physics

• Annealing 100%
• High Electron Mobility Transistors 100%
• Field Emission 100%
• Temperature 100%
• Metal 100%
• Transmission Electron Microscopy 50%
• Work Functions 50%
• Electrical Resistivity 50%
• Semiconductor 50%
• Diffusivity 50%
• Shapes 50%
• Region 50%
• Substrates 50%
• Performance 50%
• Work 50%

Material Science

• Contact Resistance 100%
• Surface Morphology 50%
• Semiconductor Material 50%
• Metallization 50%
• Aluminum Nitride 50%
• Microstructural Analysis 50%
• Vacancy 50%
• Morphology 50%
• Multilayers 50%