Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Young Chul Byun, Chandreswar Mahata, Chee Hong An, Jungwoo Oh, Rino Choi, Hyoungsub Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this paper, we examined the effects of two different oxidants (H 2O and O 3) used during the atomic layer deposition (ALD) of HfO 2 films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H 2O-based ALD process, the O 3-based process produced a large amount of elemental As and Ga-O related bonds near the HfO 2/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O 3-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O 3-based sample showed a much stronger resistance to stress-induced trap generation than the H 2O-based sample.

Original languageEnglish
Article number435305
JournalJournal of Physics D: Applied Physics
Volume45
Issue number43
DOIs
Publication statusPublished - 2012 Oct 31

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Atomic layer deposition
Gate dielectrics
atomic layer epitaxy
Oxidants
Electric properties
electrical properties
Interface states
Electric current measurement
traps
Leakage currents
Capacitance
borders
Electric potential
leakage
capacitance
electric potential
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants. / Byun, Young Chul; Mahata, Chandreswar; An, Chee Hong; Oh, Jungwoo; Choi, Rino; Kim, Hyoungsub.

In: Journal of Physics D: Applied Physics, Vol. 45, No. 43, 435305, 31.10.2012.

Research output: Contribution to journalArticle

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AU - Mahata, Chandreswar

AU - An, Chee Hong

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AU - Choi, Rino

AU - Kim, Hyoungsub

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