Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Young Chul Byun, Chandreswar Mahata, Chee Hong An, Jungwoo Oh, Rino Choi, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


In this paper, we examined the effects of two different oxidants (H 2O and O 3) used during the atomic layer deposition (ALD) of HfO 2 films on GaAs, particularly focusing on its interfacial and electrical properties. In comparison with the H 2O-based ALD process, the O 3-based process produced a large amount of elemental As and Ga-O related bonds near the HfO 2/GaAs interface due to its stronger oxidizing power. High interface state and border trap densities of the O 3-based sample degraded the low-field electrical stability, which was confirmed by the capacitance and leakage current measurements under various voltage-stressing conditions. However, in terms of high-field stability, the O 3-based sample showed a much stronger resistance to stress-induced trap generation than the H 2O-based sample.

Original languageEnglish
Article number435305
JournalJournal of Physics D: Applied Physics
Issue number43
Publication statusPublished - 2012 Oct 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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