Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Young Chul Byun, Chandreswar Mahata, Chee Hong An, Jungwoo Oh, Rino Choi, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

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