Interfacial bonding distribution and energy band structure of (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5)/GaAs (0 0 1) system

Jun Kyu Yang, Min Gu Kang, Woo Sik Kim, Hyung-Ho Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5) gate dielectric film was deposited on an n-GaAs (001) substrate at various substrate temperatures. Bonding distribution of interfacial Ga and As was characterized by comparing the 3d and 3p photoelectron lines. Surface passivation using (NH 4 ) 2 S was employed to preserve a stable interface. Interfacial GaAs oxide was not formed after the deposition, since bonding transition from As-S to Ga-S bonds provides thermal stability and protective effect against oxidation. While, without the passivation, interfacial GaAs-oxides were continuously grown as the substrate temperature was increased. The energy band gap of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was defined as 6.8eV using energy loss spectra of O 1s photoelectrons. The valence band maximum energy (E VBM ) of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was determined to be 3.7eV. By arrangement of the measured energy bandgap and E VBM , the energy band structure of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 /GaAs system was demonstrated and an enhanced conduction band offset was observed.

Original languageEnglish
Pages (from-to)251-255
Number of pages5
JournalApplied Surface Science
Volume237
Issue number1-4
DOIs
Publication statusPublished - 2004 Oct 15

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Band structure
Photoelectrons
Passivation
Energy gap
Substrates
Oxides
Dielectric films
Gate dielectrics
Valence bands
Conduction bands
Energy dissipation
Thermodynamic stability
Oxidation
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Interfacial bonding distribution and energy band structure of (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5)/GaAs (0 0 1) system",
abstract = "A (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5) gate dielectric film was deposited on an n-GaAs (001) substrate at various substrate temperatures. Bonding distribution of interfacial Ga and As was characterized by comparing the 3d and 3p photoelectron lines. Surface passivation using (NH 4 ) 2 S was employed to preserve a stable interface. Interfacial GaAs oxide was not formed after the deposition, since bonding transition from As-S to Ga-S bonds provides thermal stability and protective effect against oxidation. While, without the passivation, interfacial GaAs-oxides were continuously grown as the substrate temperature was increased. The energy band gap of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was defined as 6.8eV using energy loss spectra of O 1s photoelectrons. The valence band maximum energy (E VBM ) of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was determined to be 3.7eV. By arrangement of the measured energy bandgap and E VBM , the energy band structure of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 /GaAs system was demonstrated and an enhanced conduction band offset was observed.",
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Interfacial bonding distribution and energy band structure of (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5)/GaAs (0 0 1) system . / Yang, Jun Kyu; Kang, Min Gu; Kim, Woo Sik; Park, Hyung-Ho.

In: Applied Surface Science, Vol. 237, No. 1-4, 15.10.2004, p. 251-255.

Research output: Contribution to journalArticle

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AB - A (Gd 2 O 3 ) 1 - x (SiO 2 ) x (x = 0.5) gate dielectric film was deposited on an n-GaAs (001) substrate at various substrate temperatures. Bonding distribution of interfacial Ga and As was characterized by comparing the 3d and 3p photoelectron lines. Surface passivation using (NH 4 ) 2 S was employed to preserve a stable interface. Interfacial GaAs oxide was not formed after the deposition, since bonding transition from As-S to Ga-S bonds provides thermal stability and protective effect against oxidation. While, without the passivation, interfacial GaAs-oxides were continuously grown as the substrate temperature was increased. The energy band gap of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was defined as 6.8eV using energy loss spectra of O 1s photoelectrons. The valence band maximum energy (E VBM ) of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 was determined to be 3.7eV. By arrangement of the measured energy bandgap and E VBM , the energy band structure of (Gd 2 O 3 ) 0.5 (SiO 2 ) 0.5 /GaAs system was demonstrated and an enhanced conduction band offset was observed.

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