Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

M. H. Cho, H. S. Chang, D. W. Moon, S. K. Kang, B. K. Min, D. H. Ko, H. S. Kim, Paul C. McIntyre, J. H. Lee, J. H. Ku, N. I. Lee

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Abstract

The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

Original languageEnglish
Pages (from-to)1171-1173
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number7
DOIs
Publication statusPublished - 2004 Feb 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Cho, M. H., Chang, H. S., Moon, D. W., Kang, S. K., Min, B. K., Ko, D. H., Kim, H. S., McIntyre, P. C., Lee, J. H., Ku, J. H., & Lee, N. I. (2004). Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition. Applied Physics Letters, 84(7), 1171-1173. https://doi.org/10.1063/1.1647703