Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

M. H. Cho, H. S. Chang, D. W. Moon, S. K. Kang, B. K. Min, D. H. Ko, H. S. Kim, Paul C. McIntyre, J. H. Lee, J. H. Ku, N. I. Lee

Research output: Contribution to journalArticle

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Abstract

The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

Original languageEnglish
Pages (from-to)1171-1173
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number7
DOIs
Publication statusPublished - 2004 Feb 16

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atomic layer epitaxy
annealing
silicates
capacitance
traps
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cho, M. H. ; Chang, H. S. ; Moon, D. W. ; Kang, S. K. ; Min, B. K. ; Ko, D. H. ; Kim, H. S. ; McIntyre, Paul C. ; Lee, J. H. ; Ku, J. H. ; Lee, N. I. / Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition. In: Applied Physics Letters. 2004 ; Vol. 84, No. 7. pp. 1171-1173.
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abstract = "The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.",
author = "Cho, {M. H.} and Chang, {H. S.} and Moon, {D. W.} and Kang, {S. K.} and Min, {B. K.} and Ko, {D. H.} and Kim, {H. S.} and McIntyre, {Paul C.} and Lee, {J. H.} and Ku, {J. H.} and Lee, {N. I.}",
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Cho, MH, Chang, HS, Moon, DW, Kang, SK, Min, BK, Ko, DH, Kim, HS, McIntyre, PC, Lee, JH, Ku, JH & Lee, NI 2004, 'Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition', Applied Physics Letters, vol. 84, no. 7, pp. 1171-1173. https://doi.org/10.1063/1.1647703

Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition. / Cho, M. H.; Chang, H. S.; Moon, D. W.; Kang, S. K.; Min, B. K.; Ko, D. H.; Kim, H. S.; McIntyre, Paul C.; Lee, J. H.; Ku, J. H.; Lee, N. I.

In: Applied Physics Letters, Vol. 84, No. 7, 16.02.2004, p. 1171-1173.

Research output: Contribution to journalArticle

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T1 - Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

AU - Cho, M. H.

AU - Chang, H. S.

AU - Moon, D. W.

AU - Kang, S. K.

AU - Min, B. K.

AU - Ko, D. H.

AU - Kim, H. S.

AU - McIntyre, Paul C.

AU - Lee, J. H.

AU - Ku, J. H.

AU - Lee, N. I.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

AB - The effects of the interfacial characteristics of HfO 2 dielectrics on strained Si 0.7Ge 0.3 deposited by atomic layer deposition (ALD) were investigated. The silicate layer at the interfacial region was suppressed on SiGe substrate while the GeO x layer formed in the interfacial region was decreased after annealing treatment. The C-V characteristics of the 50-Ȧ-thick HfO 2 film was converted into polycrystalline structure after rapid annealing at 700°C. The results show that formation of GeO x decreased the accumulation capacitance and increased the oxide trap charge.

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