Interfacial characteristics of HfO 2 films grown on strained Si 0.7Ge 0.3 by atomic-layer deposition

M. H. Cho, H. S. Chang, D. W. Moon, S. K. Kang, B. K. Min, D. H. Ko, H. S. Kim, Paul C. McIntyre, J. H. Lee, J. H. Ku, N. I. Lee

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Physics & Astronomy