Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition

Hyoungsub Kim, Paul C. McIntyre, Chi On Chui, Krishna C. Saraswat, Mann Ho Cho

Research output: Contribution to journalArticle

130 Citations (Scopus)

Abstract

The investigation of the microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers, with and and without the presence of a GeO xN y interface layer, was discussed. The effect of nitride layer nitride layer on thermal stability of the metal oxide/Ge structures was probed by using medium energy ion energy spectroscopy (MEIS). It was shown that atomic-layer deposited HfO 2 on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance-voltage behavior. The direct substrate surface nitridation at 600 °C in NH 3 ambient before HfO 2 deposition improved the carrier trapping characteristics.

Original languageEnglish
Pages (from-to)2902-2904
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number14
DOIs
Publication statusPublished - 2004 Oct 4

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Interfacial characteristics of HfO <sub>2</sub> grown on nitrided Ge (100) substrates by atomic-layer deposition'. Together they form a unique fingerprint.

  • Cite this