The investigation of the microstructural and electrical properties of Ge-based metal-oxide-semiconductor capacitors containing high-k gate dielectric layers, with and and without the presence of a GeO xN y interface layer, was discussed. The effect of nitride layer nitride layer on thermal stability of the metal oxide/Ge structures was probed by using medium energy ion energy spectroscopy (MEIS). It was shown that atomic-layer deposited HfO 2 on a chemical oxide-terminated Ge (100) surface exhibited poor capacitance-voltage behavior. The direct substrate surface nitridation at 600 °C in NH 3 ambient before HfO 2 deposition improved the carrier trapping characteristics.
Bibliographical noteFunding Information:
This research was supported in part by the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing, Award No. Q423740, by an IBM Faculty Award, by a Mayfield Stanford Graduate Fellowship, and by the Intel Foundation Ph.D. Fellowship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)