Interfacial characteristics of N-incorporated HfAlO high-k thin films

Mann-Ho Cho, D. W. Moon, S. A. Park, Y. K. Kim, KwangHo Jeong, S. K. Kang, Dae Hong Ko, S. J. Doh, J. H. Lee, N. I. Lee

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.

Original languageEnglish
Pages (from-to)5243-5245
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number25
DOIs
Publication statusPublished - 2004 Jun 21

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oxides
thin films
oxide films
film thickness
physical properties
annealing
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cho, M-H., Moon, D. W., Park, S. A., Kim, Y. K., Jeong, K., Kang, S. K., ... Lee, N. I. (2004). Interfacial characteristics of N-incorporated HfAlO high-k thin films. Applied Physics Letters, 84(25), 5243-5245. https://doi.org/10.1063/1.1764595
Cho, Mann-Ho ; Moon, D. W. ; Park, S. A. ; Kim, Y. K. ; Jeong, KwangHo ; Kang, S. K. ; Ko, Dae Hong ; Doh, S. J. ; Lee, J. H. ; Lee, N. I. / Interfacial characteristics of N-incorporated HfAlO high-k thin films. In: Applied Physics Letters. 2004 ; Vol. 84, No. 25. pp. 5243-5245.
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Cho, M-H, Moon, DW, Park, SA, Kim, YK, Jeong, K, Kang, SK, Ko, DH, Doh, SJ, Lee, JH & Lee, NI 2004, 'Interfacial characteristics of N-incorporated HfAlO high-k thin films', Applied Physics Letters, vol. 84, no. 25, pp. 5243-5245. https://doi.org/10.1063/1.1764595

Interfacial characteristics of N-incorporated HfAlO high-k thin films. / Cho, Mann-Ho; Moon, D. W.; Park, S. A.; Kim, Y. K.; Jeong, KwangHo; Kang, S. K.; Ko, Dae Hong; Doh, S. J.; Lee, J. H.; Lee, N. I.

In: Applied Physics Letters, Vol. 84, No. 25, 21.06.2004, p. 5243-5245.

Research output: Contribution to journalArticle

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AU - Cho, Mann-Ho

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AU - Kang, S. K.

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N2 - The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.

AB - The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.

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