Interfacial characteristics of N-incorporated HfAlO high-k thin films

M. H. Cho, D. W. Moon, S. A. Park, Y. K. Kim, K. Jeong, S. K. Kang, D. H. Ko, S. J. Doh, J. H. Lee, N. I. Lee

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29 Citations (Scopus)

Abstract

The physical and electronic properties of the chemical state of N-incorporated Hf-Al-oxide films were investigated. It was observed that the chemical states of Al oxide were changed by incorporated N but the chemical states of Hf oxide were not changed. It was also observed that after the annealing treatment the film thickness of the interfacial and upper layers remained. The results show that for a change in electrical characteristics of HfAlO high dielectric films, N-incorporation process is a major controlling factor.

Original languageEnglish
Pages (from-to)5243-5245
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number25
DOIs
Publication statusPublished - 2004 Jun 21

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices of MOST.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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