Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes

Su Been Heo, Jong Hun Yu, Minju Kim, Yeonjin Yi, Ji Eun Lee, Han Ki Kim, Seong Jun Kang

Research output: Contribution to journalArticle

Abstract

The interfacial electronic structure between a W-doped In2O3 (IWO) transparent electrode and a V2O5 hole injection layer (HIL) has been investigated using ultraviolet photoelectron spectroscopy for high-performance and inorganic quantum-dot light-emitting diodes (QLEDs). Based on the interfacial electronic structure measurements, we found gap states in a V2O5 HIL at 1.0 eV below the Fermi level. Holes can be efficiently injected from the IWO electrode into poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(4-sec-butylphenyl)diphenylamine)] (TFB) through the gap states of V2O5, which was confirmed by the hole injection characteristics of a hole-only device. Therefore, conventional normal-structured QLEDs were fabricated on a glass substrate with the IWO transparent electrode and V2O5 HIL. The maximum luminance of the device was measured as 9443.5 cd m-2. Our result suggests that the IWO electrode and V2O5 HIL are a good combination for developing high-performance and inorganic QLEDs.

Original languageEnglish
Pages (from-to)11996-12000
Number of pages5
JournalRSC Advances
Volume9
Issue number21
DOIs
Publication statusPublished - 2019 Jan 1

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Semiconductor quantum dots
Electronic structure
Light emitting diodes
Electrodes
Ultraviolet photoelectron spectroscopy
Diphenylamine
Fermi level
Luminance
Glass
vanadium pentoxide
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Heo, Su Been ; Yu, Jong Hun ; Kim, Minju ; Yi, Yeonjin ; Lee, Ji Eun ; Kim, Han Ki ; Kang, Seong Jun. / Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes. In: RSC Advances. 2019 ; Vol. 9, No. 21. pp. 11996-12000.
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Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes. / Heo, Su Been; Yu, Jong Hun; Kim, Minju; Yi, Yeonjin; Lee, Ji Eun; Kim, Han Ki; Kang, Seong Jun.

In: RSC Advances, Vol. 9, No. 21, 01.01.2019, p. 11996-12000.

Research output: Contribution to journalArticle

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