Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes

Su Been Heo, Jong Hun Yu, Minju Kim, Yeonjin Yi, Ji Eun Lee, Han Ki Kim, Seong Jun Kang

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4 Citations (Scopus)

Abstract

The interfacial electronic structure between a W-doped In2O3 (IWO) transparent electrode and a V2O5 hole injection layer (HIL) has been investigated using ultraviolet photoelectron spectroscopy for high-performance and inorganic quantum-dot light-emitting diodes (QLEDs). Based on the interfacial electronic structure measurements, we found gap states in a V2O5 HIL at 1.0 eV below the Fermi level. Holes can be efficiently injected from the IWO electrode into poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(4-sec-butylphenyl)diphenylamine)] (TFB) through the gap states of V2O5, which was confirmed by the hole injection characteristics of a hole-only device. Therefore, conventional normal-structured QLEDs were fabricated on a glass substrate with the IWO transparent electrode and V2O5 HIL. The maximum luminance of the device was measured as 9443.5 cd m-2. Our result suggests that the IWO electrode and V2O5 HIL are a good combination for developing high-performance and inorganic QLEDs.

Original languageEnglish
Pages (from-to)11996-12000
Number of pages5
JournalRSC Advances
Volume9
Issue number21
DOIs
Publication statusPublished - 2019

Bibliographical note

Funding Information:
This work was supported by a research project grant from the National Research Foundation of Korea (NRF-2016R1D1A1B03932144).

Publisher Copyright:
© 2019 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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