Interfacial electronic structure of C60/ZnPc/AZO on photoemission spectroscopy for organic photovoltaic applications

Nari Heo; Yoonsu Kim; Yunwoo Jung; Suyoung Cheon; Soohaeng Cho; Sang Wan Cho; Soohyung Park; Yeonjin Yi; Kevin E. Smith

doi:10.1016/j.chemphys.2016.03.025

Interfacial electronic structure of C₆₀/ZnPc/AZO on photoemission spectroscopy for organic photovoltaic applications

Nari Heo, Yoonsu Kim, Yunwoo Jung, Suyoung Cheon, Soohaeng Cho, Sang Wan Cho, Soohyung Park, Yeonjin Yi, Kevin E. Smith

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The interfacial electronic structure of a bilayer of fullerene (C₆₀) and zinc phthalocyanine (ZnPc) grown on aluminum-doped zinc oxide (AZO) substrates has been evaluated by X-ray and ultraviolet photoemission spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the ZnPc layer and the lowest unoccupied molecular orbital (LUMO) level of the C₆₀ layer (E^D_HOMO − E^A_LUMO) was determined and compared to that grown on an indium tin oxide (ITO) substrate. The E^D_HOMO − E^A_LUMO value of the heterojunction on AZO was 1.4 eV, while that on ITO was 1.1 eV. This result is discussed in terms of the differences of the work function and resistivity of each transparent conductive oxide. We also obtained complete energy level diagrams of C₆₀/ZnPc/AZO and C₆₀/ZnPc/ITO.

Original language	English
Pages (from-to)	145-149
Number of pages	5
Journal	Chemical Physics
Volume	478
DOIs	https://doi.org/10.1016/j.chemphys.2016.03.025
Publication status	Published - 2016 Oct 20

Bibliographical note

Funding Information:
This work was supported by a research project of the National Research Foundation of Korea (Grant No. 2015R1D1A1A02061033 ), the Yonsei University Future-leading Research Initiative (Grant No. 2015-22-0083 ), and the Technology Innovation Program (Grant No. 10052274) funded by the Ministry of Trade, Industry & Energy (Korea).

Publisher Copyright:
© 2016 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.chemphys.2016.03.025

Cite this

@article{773ea0be214d486c8a08585552c6db66,

title = "Interfacial electronic structure of C60/ZnPc/AZO on photoemission spectroscopy for organic photovoltaic applications",

abstract = "The interfacial electronic structure of a bilayer of fullerene (C60) and zinc phthalocyanine (ZnPc) grown on aluminum-doped zinc oxide (AZO) substrates has been evaluated by X-ray and ultraviolet photoemission spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the ZnPc layer and the lowest unoccupied molecular orbital (LUMO) level of the C60 layer (EDHOMO − EALUMO) was determined and compared to that grown on an indium tin oxide (ITO) substrate. The EDHOMO − EALUMO value of the heterojunction on AZO was 1.4 eV, while that on ITO was 1.1 eV. This result is discussed in terms of the differences of the work function and resistivity of each transparent conductive oxide. We also obtained complete energy level diagrams of C60/ZnPc/AZO and C60/ZnPc/ITO.",

author = "Nari Heo and Yoonsu Kim and Yunwoo Jung and Suyoung Cheon and Soohaeng Cho and Cho, {Sang Wan} and Soohyung Park and Yeonjin Yi and Smith, {Kevin E.}",

note = "Funding Information: This work was supported by a research project of the National Research Foundation of Korea (Grant No. 2015R1D1A1A02061033 ), the Yonsei University Future-leading Research Initiative (Grant No. 2015-22-0083 ), and the Technology Innovation Program (Grant No. 10052274) funded by the Ministry of Trade, Industry & Energy (Korea). Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = oct,

day = "20",

doi = "10.1016/j.chemphys.2016.03.025",

language = "English",

volume = "478",

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journal = "Chemical Physics",

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Interfacial electronic structure of C₆₀/ZnPc/AZO on photoemission spectroscopy for organic photovoltaic applications. / Heo, Nari; Kim, Yoonsu; Jung, Yunwoo; Cheon, Suyoung; Cho, Soohaeng; Cho, Sang Wan; Park, Soohyung; Yi, Yeonjin; Smith, Kevin E.

In: Chemical Physics, Vol. 478, 20.10.2016, p. 145-149.

Research output: Contribution to journal › Article › peer-review

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T1 - Interfacial electronic structure of C60/ZnPc/AZO on photoemission spectroscopy for organic photovoltaic applications

AU - Heo, Nari

AU - Kim, Yoonsu

AU - Jung, Yunwoo

AU - Cheon, Suyoung

AU - Cho, Soohaeng

AU - Cho, Sang Wan

AU - Park, Soohyung

AU - Yi, Yeonjin

AU - Smith, Kevin E.

N1 - Funding Information: This work was supported by a research project of the National Research Foundation of Korea (Grant No. 2015R1D1A1A02061033 ), the Yonsei University Future-leading Research Initiative (Grant No. 2015-22-0083 ), and the Technology Innovation Program (Grant No. 10052274) funded by the Ministry of Trade, Industry & Energy (Korea). Publisher Copyright: © 2016 Elsevier B.V.

PY - 2016/10/20

Y1 - 2016/10/20

N2 - The interfacial electronic structure of a bilayer of fullerene (C60) and zinc phthalocyanine (ZnPc) grown on aluminum-doped zinc oxide (AZO) substrates has been evaluated by X-ray and ultraviolet photoemission spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the ZnPc layer and the lowest unoccupied molecular orbital (LUMO) level of the C60 layer (EDHOMO − EALUMO) was determined and compared to that grown on an indium tin oxide (ITO) substrate. The EDHOMO − EALUMO value of the heterojunction on AZO was 1.4 eV, while that on ITO was 1.1 eV. This result is discussed in terms of the differences of the work function and resistivity of each transparent conductive oxide. We also obtained complete energy level diagrams of C60/ZnPc/AZO and C60/ZnPc/ITO.

AB - The interfacial electronic structure of a bilayer of fullerene (C60) and zinc phthalocyanine (ZnPc) grown on aluminum-doped zinc oxide (AZO) substrates has been evaluated by X-ray and ultraviolet photoemission spectroscopy. The energy difference between the highest occupied molecular orbital (HOMO) level of the ZnPc layer and the lowest unoccupied molecular orbital (LUMO) level of the C60 layer (EDHOMO − EALUMO) was determined and compared to that grown on an indium tin oxide (ITO) substrate. The EDHOMO − EALUMO value of the heterojunction on AZO was 1.4 eV, while that on ITO was 1.1 eV. This result is discussed in terms of the differences of the work function and resistivity of each transparent conductive oxide. We also obtained complete energy level diagrams of C60/ZnPc/AZO and C60/ZnPc/ITO.

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