Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

Yeonjin Yi, Seong Jun Kang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.

Original languageEnglish
Pages (from-to)3119-3122
Number of pages4
JournalThin Solid Films
Volume519
Issue number10
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Fullerenes
fullerenes
Electronic structure
calcium
Calcium
electronic structure
Molecular orbitals
Electron energy levels
molecular orbitals
energy levels
Vacuum
Ultraviolet photoelectron spectroscopy
dipoles
vacuum
Electron injection
interfacial energy
shift
ultraviolet spectroscopy
Fermi level
Interfacial energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

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abstract = "The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.",
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Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices. / Yi, Yeonjin; Kang, Seong Jun.

In: Thin Solid Films, Vol. 519, No. 10, 01.03.2011, p. 3119-3122.

Research output: Contribution to journalArticle

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