Abstract
The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.
| Original language | English |
|---|---|
| Pages (from-to) | 3119-3122 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2011 Mar 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
}
Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices. / Yi, Yeonjin; Kang, Seong Jun.
In: Thin Solid Films, Vol. 519, No. 10, 01.03.2011, p. 3119-3122.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices
AU - Yi, Yeonjin
AU - Kang, Seong Jun
PY - 2011/3/1
Y1 - 2011/3/1
N2 - The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.
AB - The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.
UR - http://www.scopus.com/inward/record.url?scp=79952313890&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952313890&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.12.010
DO - 10.1016/j.tsf.2010.12.010
M3 - Article
AN - SCOPUS:79952313890
VL - 519
SP - 3119
EP - 3122
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 10
ER -