Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

Yeonjin Yi; Seong Jun Kang

doi:10.1016/j.tsf.2010.12.010

Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

Yeonjin Yi, Seong Jun Kang

Department of Physics

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

The electronic structure of fullerene (C₆₀) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C₆₀/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C₆₀ on Ca. The HOMO level of C₆₀ shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C₆₀ side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C₆₀/Ca is presented.

Original language	English
Pages (from-to)	3119-3122
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2010.12.010
Publication status	Published - 2011 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2010.12.010

Fingerprint Dive into the research topics of 'Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices'. Together they form a unique fingerprint.

Cite this

Yi, Y., & Kang, S. J. (2011). Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices. Thin Solid Films, 519(10), 3119-3122. https://doi.org/10.1016/j.tsf.2010.12.010

@article{4055a67a4af448fb9b3795f8cdf8b936,

title = "Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices",

abstract = "The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.",

author = "Yeonjin Yi and Kang, {Seong Jun}",

year = "2011",

month = mar,

day = "1",

doi = "10.1016/j.tsf.2010.12.010",

language = "English",

volume = "519",

pages = "3119--3122",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "10",

}

TY - JOUR

T1 - Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

AU - Yi, Yeonjin

AU - Kang, Seong Jun

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.

AB - The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.

UR - http://www.scopus.com/inward/record.url?scp=79952313890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952313890&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.12.010

DO - 10.1016/j.tsf.2010.12.010

M3 - Article

AN - SCOPUS:79952313890

VL - 519

SP - 3119

EP - 3122

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 10

ER -