Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

Yeonjin Yi; Seong Jun Kang

doi:10.1016/j.tsf.2010.12.010

Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

Yeonjin Yi, Seong Jun Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The electronic structure of fullerene (C₆₀) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C₆₀/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C₆₀ on Ca. The HOMO level of C₆₀ shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C₆₀ side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C₆₀/Ca is presented.

Original language	English
Pages (from-to)	3119-3122
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2010.12.010
Publication status	Published - 2011 Mar 1

Bibliographical note

Funding Information:
This work was supported by a research project of the Korea Research Foundation (Grant No. 2010-0015727 and 2010-0003009 ) and Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology”. Also Greonggi province supported this project through the GRRC program [GRRC Kyung Hee 2010-B07].

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.12.010

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title = "Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices",

abstract = "The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.",

author = "Yeonjin Yi and Kang, {Seong Jun}",

note = "Funding Information: This work was supported by a research project of the Korea Research Foundation (Grant No. 2010-0015727 and 2010-0003009 ) and Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology”. Also Greonggi province supported this project through the GRRC program [GRRC Kyung Hee 2010-B07].",

year = "2011",

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doi = "10.1016/j.tsf.2010.12.010",

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T1 - Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

AU - Yi, Yeonjin

AU - Kang, Seong Jun

N1 - Funding Information: This work was supported by a research project of the Korea Research Foundation (Grant No. 2010-0015727 and 2010-0003009 ) and Korea Research Council of Fundamental Science and Technology (KRCF) through the KRISS project of “Development of Advanced Industrial Metrology”. Also Greonggi province supported this project through the GRRC program [GRRC Kyung Hee 2010-B07].

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.

AB - The electronic structure of fullerene (C60) deposited on calcium (Ca) was investigated using in-situ ultraviolet photoelectron spectroscopy. The energy level alignment at the C60/Ca interface was estimated by combining both shifts of the highest occupied molecular orbital (HOMO) level and of the vacuum level during the step-by-step deposition of C60 on Ca. The HOMO level of C60 shows shifts relating to band-bending, resulting in an electron injection barrier of 0.2 eV with accumulation contact with the Ca substrate. The vacuum level reveals an interface dipole of 1.11 eV with negative poles on the C60 side. Noticeably, gap states are formed at the interface region, which might pin the Fermi level and be responsible for the formation of the interface dipole. The complete interfacial energy level diagram of C60/Ca is presented.

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DO - 10.1016/j.tsf.2010.12.010

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EP - 3122

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 10

ER -

Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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