Interfacial properties of YBa2Cu3O7-x thin films on Al2O3 substrates prepared by pulsed laser deposition

Sang Yeol Lee; Hyung H.O. Park

doi:10.1007/BF02666732

Interfacial properties of YBa₂Cu₃O_7-x thin films on Al₂O₃ substrates prepared by pulsed laser deposition

Sang Yeol Lee, Hyung H.O. Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The interfaces of YBa₂Cu₃O_7-x (YBCO) superconducting thin films grown on (1 102) r-plane Al₂O., by pulsed laser deposition have been investigated by a transmission electron microscopy and an Auger electron spectroscopy depth profile. We used the PrBa₂Cu₃O_7-x (PBCO) buffer layer to prevent the interdiffusion and compared the interfaces of YBCO/Al₂O₃ and YBCO/PBCO/Al₂O₃. The intermediate layer in the YBCO film deposited on bare sapphire is visible between the film and the substrate but no boundary layer in the film grown on PBCO buffered sapphire was observed directly by the cross-section image of TEM. The thickness of the intermediate layer in the film on bare sapphire is about 30 nm. This result of TEM observation is consistent with that of AES depth profile.

Original language	English
Pages (from-to)	972-975
Number of pages	4
Journal	Journal of Electronic Materials
Volume	25
Issue number	6
DOIs	https://doi.org/10.1007/BF02666732
Publication status	Published - 1996 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/BF02666732

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title = "Interfacial properties of YBa2Cu3O7-x thin films on Al2O3 substrates prepared by pulsed laser deposition",

abstract = "The interfaces of YBa2Cu3O7-x (YBCO) superconducting thin films grown on (1 102) r-plane Al2O., by pulsed laser deposition have been investigated by a transmission electron microscopy and an Auger electron spectroscopy depth profile. We used the PrBa2Cu3O7-x (PBCO) buffer layer to prevent the interdiffusion and compared the interfaces of YBCO/Al2O3 and YBCO/PBCO/Al2O3. The intermediate layer in the YBCO film deposited on bare sapphire is visible between the film and the substrate but no boundary layer in the film grown on PBCO buffered sapphire was observed directly by the cross-section image of TEM. The thickness of the intermediate layer in the film on bare sapphire is about 30 nm. This result of TEM observation is consistent with that of AES depth profile.",

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AU - Lee, Sang Yeol

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N2 - The interfaces of YBa2Cu3O7-x (YBCO) superconducting thin films grown on (1 102) r-plane Al2O., by pulsed laser deposition have been investigated by a transmission electron microscopy and an Auger electron spectroscopy depth profile. We used the PrBa2Cu3O7-x (PBCO) buffer layer to prevent the interdiffusion and compared the interfaces of YBCO/Al2O3 and YBCO/PBCO/Al2O3. The intermediate layer in the YBCO film deposited on bare sapphire is visible between the film and the substrate but no boundary layer in the film grown on PBCO buffered sapphire was observed directly by the cross-section image of TEM. The thickness of the intermediate layer in the film on bare sapphire is about 30 nm. This result of TEM observation is consistent with that of AES depth profile.

AB - The interfaces of YBa2Cu3O7-x (YBCO) superconducting thin films grown on (1 102) r-plane Al2O., by pulsed laser deposition have been investigated by a transmission electron microscopy and an Auger electron spectroscopy depth profile. We used the PrBa2Cu3O7-x (PBCO) buffer layer to prevent the interdiffusion and compared the interfaces of YBCO/Al2O3 and YBCO/PBCO/Al2O3. The intermediate layer in the YBCO film deposited on bare sapphire is visible between the film and the substrate but no boundary layer in the film grown on PBCO buffered sapphire was observed directly by the cross-section image of TEM. The thickness of the intermediate layer in the film on bare sapphire is about 30 nm. This result of TEM observation is consistent with that of AES depth profile.

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Interfacial properties of YBa₂Cu₃O_7-x thin films on Al₂O₃ substrates prepared by pulsed laser deposition

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