Interfacial properties of YBa2Cu3O7-x thin films on Al2O3 substrates prepared by pulsed laser deposition

Sang Yeol Lee, Hyung-Ho Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The interfaces of YBa2Cu3O7-x (YBCO) superconducting thin films grown on (1 102) r-plane Al2O., by pulsed laser deposition have been investigated by a transmission electron microscopy and an Auger electron spectroscopy depth profile. We used the PrBa2Cu3O7-x (PBCO) buffer layer to prevent the interdiffusion and compared the interfaces of YBCO/Al2O3 and YBCO/PBCO/Al2O3. The intermediate layer in the YBCO film deposited on bare sapphire is visible between the film and the substrate but no boundary layer in the film grown on PBCO buffered sapphire was observed directly by the cross-section image of TEM. The thickness of the intermediate layer in the film on bare sapphire is about 30 nm. This result of TEM observation is consistent with that of AES depth profile.

Original languageEnglish
Pages (from-to)972-975
Number of pages4
JournalJournal of Electronic Materials
Volume25
Issue number6
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Aluminum Oxide
Sapphire
Thin films
sapphire
Substrates
thin films
Transmission electron microscopy
transmission electron microscopy
Superconducting films
Auger electron spectroscopy
Buffer layers
profiles
Auger spectroscopy
electron spectroscopy
boundary layers
Boundary layers
buffers
barium copper yttrium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Interfacial properties of YBa2Cu3O7-x thin films on Al2O3 substrates prepared by pulsed laser deposition. / Lee, Sang Yeol; Park, Hyung-Ho.

In: Journal of Electronic Materials, Vol. 25, No. 6, 01.01.1996, p. 972-975.

Research output: Contribution to journalArticle

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