Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode

Dae Woo Kim, Joon Seop Kwak, Hee Soo Park, Hwa Nyun Kim, Hong Koo Baik, Sung Man Lee, Chang Soo Kim, Sam Kyu Noh

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Abstract

Interfacial reaction and electrical property of the Ge/Ni/ZnSe have been investigated as a fundamental study to develop ohmic contacts to p-ZnSe, using x-ray diffraction, Auger electron spectroscopy, cross-sectional transmission electron microscopy, and capacitance-voltage measurement. Ni/ZnSe, Ni/Ge systems have been also studied for comparison with the Ge/Ni/p-ZnSe system and the electrical property could be related to the interfacial reaction. After annealing at 170°C, Ni3S2 and NiGe were formed at Ni/ZnSe and Ge/Ni interface, respectively. The increase of annealing temperature resulted in the decomposition of Ni3Se2 through the reaction with Ge. The change of the Schottky barrier height strongly depended on the annealing temperature. According to the result of Ni/ ZnSe interface reaction, Ni3Se2 in the Ni/ZnSe interface lowered the Schottky barrier height. At higher annealing temperature, the Schottky barrier height increased and it was mainly due to the thermal decomposition of ZnSe.

Original languageEnglish
Pages (from-to)83-89
Number of pages7
JournalJournal of Electronic Materials
Volume26
Issue number2
DOIs
Publication statusPublished - 1997 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Kim, D. W., Kwak, J. S., Park, H. S., Kim, H. N., Baik, H. K., Lee, S. M., Kim, C. S., & Noh, S. K. (1997). Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode. Journal of Electronic Materials, 26(2), 83-89. https://doi.org/10.1007/s11664-997-0093-9