Interfacial reaction between aluminum metal and boron-doped polysilicon in a planar type antifuse device

Jong Tae Baek, Hyung-Ho Park, Byung Tae Ahn, Chi Hoon Jun, Youn Tae Kim, Yoon Ho Song, Jongdae Kim

Research output: Contribution to journalArticle

Abstract

The interfacial reaction between Al metal and boron-doped polysilicon was investigated to understand the mechanism of link formation in the planar type antifuse with a polysilicon pad and two Al electrodes. In the antifuse, the Si-Al alloy filament with a low resistance was formed only on the boron-doped polysilicon pad, not on the phosphorus-doped or undoped polysilicon pads. After annealing Al/boron-doped polysilicon at 400°C for 20 min, an Al-B compound (AlB2) was found by the reaction between Al metal and solute borons at the grain boundaries of polysilicon using Auger electron spectroscopy, X-ray diffractometer, and X-ray photoelectron spectroscopy. In the planar type antifuse device, the formation of AlB2 at the grain boundaries might act as a seed for the conductive filament formation by supplying Al from the positive electrode. After forming a low resistance Si-Al alloy filament, it grows toward the negative electrode by the reaction between supplied Al and highly reactive solute borons segregated at the grain boundaries.

Original languageEnglish
Pages (from-to)2451-2454
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number5 A
Publication statusPublished - 1998 Dec 1

Fingerprint

Surface chemistry
Polysilicon
Boron
filaments
boron
grain boundaries
low resistance
aluminum
Aluminum
electrodes
solutes
Metals
metals
Grain boundaries
supplying
diffractometers
Electrodes
Auger spectroscopy
electron spectroscopy
phosphorus

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Baek, Jong Tae ; Park, Hyung-Ho ; Ahn, Byung Tae ; Jun, Chi Hoon ; Kim, Youn Tae ; Song, Yoon Ho ; Kim, Jongdae. / Interfacial reaction between aluminum metal and boron-doped polysilicon in a planar type antifuse device. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1998 ; Vol. 37, No. 5 A. pp. 2451-2454.
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Interfacial reaction between aluminum metal and boron-doped polysilicon in a planar type antifuse device. / Baek, Jong Tae; Park, Hyung-Ho; Ahn, Byung Tae; Jun, Chi Hoon; Kim, Youn Tae; Song, Yoon Ho; Kim, Jongdae.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 5 A, 01.12.1998, p. 2451-2454.

Research output: Contribution to journalArticle

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AU - Kim, Youn Tae

AU - Song, Yoon Ho

AU - Kim, Jongdae

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