The interfacial reaction between Al metal and boron-doped polysilicon was investigated to understand the mechanism of link formation in the planar type antifuse with a polysilicon pad and two Al electrodes. In the antifuse, the Si-Al alloy filament with a low resistance was formed only on the boron-doped polysilicon pad, not on the phosphorus-doped or undoped polysilicon pads. After annealing Al/boron-doped polysilicon at 400°C for 20 min, an Al-B compound (AlB2) was found by the reaction between Al metal and solute borons at the grain boundaries of polysilicon using Auger electron spectroscopy, X-ray diffractometer, and X-ray photoelectron spectroscopy. In the planar type antifuse device, the formation of AlB2 at the grain boundaries might act as a seed for the conductive filament formation by supplying Al from the positive electrode. After forming a low resistance Si-Al alloy filament, it grows toward the negative electrode by the reaction between supplied Al and highly reactive solute borons segregated at the grain boundaries.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 1998 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)