The interracial reaction between poly Si1-xGex (x = 0, 0.2, 0.4) and ZrO2 films after annealing was investigated to use ZrO2 films as an alternative gate dielectric. In the poly Si/ZrO2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si1-xGex (x = 0.2, 0.4)/ZrO2, silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si0.6Ge0.4/ZrO2 system.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering