Interfacial reaction in poly Si 1-x Ge x /ZrO 2 with Ge content in poly Si 1-x Ge x films

S. K. Kang, B. G. Min, J. H. Yoo, S. W. Nam, Dae Hong Ko, H. B. Kang, C. W. Yang, Mann-Ho Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The interracial reaction between poly Si 1-x Ge x (x = 0, 0.2, 0.4) and ZrO 2 films after annealing was investigated to use ZrO 2 films as an alternative gate dielectric. In the poly Si/ZrO 2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si 1-x Ge x (x = 0.2, 0.4)/ZrO 2 , silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si 0.6 Ge 0.4 /ZrO 2 system.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume5
Issue number12
DOIs
Publication statusPublished - 2002 Dec 1

Fingerprint

Surface chemistry
Polysilicon
Annealing
Silicates
annealing
silicates
Gate dielectrics

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kang, S. K. ; Min, B. G. ; Yoo, J. H. ; Nam, S. W. ; Ko, Dae Hong ; Kang, H. B. ; Yang, C. W. ; Cho, Mann-Ho. / Interfacial reaction in poly Si 1-x Ge x /ZrO 2 with Ge content in poly Si 1-x Ge x films In: Electrochemical and Solid-State Letters. 2002 ; Vol. 5, No. 12.
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abstract = "The interracial reaction between poly Si 1-x Ge x (x = 0, 0.2, 0.4) and ZrO 2 films after annealing was investigated to use ZrO 2 films as an alternative gate dielectric. In the poly Si/ZrO 2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si 1-x Ge x (x = 0.2, 0.4)/ZrO 2 , silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si 0.6 Ge 0.4 /ZrO 2 system.",
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Interfacial reaction in poly Si 1-x Ge x /ZrO 2 with Ge content in poly Si 1-x Ge x films . / Kang, S. K.; Min, B. G.; Yoo, J. H.; Nam, S. W.; Ko, Dae Hong; Kang, H. B.; Yang, C. W.; Cho, Mann-Ho.

In: Electrochemical and Solid-State Letters, Vol. 5, No. 12, 01.12.2002.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interfacial reaction in poly Si 1-x Ge x /ZrO 2 with Ge content in poly Si 1-x Ge x films

AU - Kang, S. K.

AU - Min, B. G.

AU - Yoo, J. H.

AU - Nam, S. W.

AU - Ko, Dae Hong

AU - Kang, H. B.

AU - Yang, C. W.

AU - Cho, Mann-Ho

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The interracial reaction between poly Si 1-x Ge x (x = 0, 0.2, 0.4) and ZrO 2 films after annealing was investigated to use ZrO 2 films as an alternative gate dielectric. In the poly Si/ZrO 2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si 1-x Ge x (x = 0.2, 0.4)/ZrO 2 , silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si 0.6 Ge 0.4 /ZrO 2 system.

AB - The interracial reaction between poly Si 1-x Ge x (x = 0, 0.2, 0.4) and ZrO 2 films after annealing was investigated to use ZrO 2 films as an alternative gate dielectric. In the poly Si/ZrO 2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si 1-x Ge x (x = 0.2, 0.4)/ZrO 2 , silicate formation was the main reaction after annealing at 900°C for 30 min. In addition, after annealing at 800°C, the silicate layer was observed only in the poly Si 0.6 Ge 0.4 /ZrO 2 system.

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