Interfacial reaction in the sputter-deposited SiO 2 /Ti 0.1 W 0.9 antifuse system

Jong Tae Baek, Hyung-Ho Park, Kyung Ik Cho, Hyung Joun Yoo, Sang Won Kang, Byung Tae Ahn

Research output: Contribution to journalArticle

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Abstract

The effects of annealing temperature on the interfacial reactions and the antifuse I-V characteristics of ultra thin SiO 2 layer deposited on Ti 0.1 W 0.9 substrate were investigated. The interfacial reactions were analyzed using x-ray photoelectron spectroscopy and Auger electron spectroscopy with the sample which is in situ annealed under ultra high vacuum or ex situ annealed in a nitrogen atmosphere. The surface of the Ti 0.1 W 0.9 substrate was oxidized during sputter deposition of SiO 2 layer. Ti, W oxides consist of Ti 2 O 3 (Ti 3 O 5 ), TiO 2 , WO 2 , and WO 3 . The WO 3 and Ti 2 O 3 decomposed into metallic W and Ti at 400 and 500°C, respectively. The breakdown voltage of the antifuse decreased as the annealing temperature increased, due to the thinning of dielectric layer resulted from the decomposition of Ti, W oxides and the formation of metallic W and Ti. Annealing at 600°C caused the reaction between metallic (Ti,W) and SiO 2 layer and formed elemental silicon in the dielectric layer, where SiO 2 layer completely lost its dielectric property. The breakdown of dielectric property might form a metallic channel in the SiO 2 film, which mainly contains metallic W, Ti, and Si.

Original languageEnglish
Pages (from-to)7074-7079
Number of pages6
JournalJournal of Applied Physics
Volume78
Issue number12
DOIs
Publication statusPublished - 1995 Dec 1

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annealing
dielectric properties
oxides
electrical faults
x ray spectroscopy
ultrahigh vacuum
Auger spectroscopy
electron spectroscopy
breakdown
photoelectron spectroscopy
decomposition
nitrogen
atmospheres
temperature
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Baek, Jong Tae ; Park, Hyung-Ho ; Cho, Kyung Ik ; Yoo, Hyung Joun ; Kang, Sang Won ; Ahn, Byung Tae. / Interfacial reaction in the sputter-deposited SiO 2 /Ti 0.1 W 0.9 antifuse system In: Journal of Applied Physics. 1995 ; Vol. 78, No. 12. pp. 7074-7079.
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Interfacial reaction in the sputter-deposited SiO 2 /Ti 0.1 W 0.9 antifuse system . / Baek, Jong Tae; Park, Hyung-Ho; Cho, Kyung Ik; Yoo, Hyung Joun; Kang, Sang Won; Ahn, Byung Tae.

In: Journal of Applied Physics, Vol. 78, No. 12, 01.12.1995, p. 7074-7079.

Research output: Contribution to journalArticle

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N2 - The effects of annealing temperature on the interfacial reactions and the antifuse I-V characteristics of ultra thin SiO 2 layer deposited on Ti 0.1 W 0.9 substrate were investigated. The interfacial reactions were analyzed using x-ray photoelectron spectroscopy and Auger electron spectroscopy with the sample which is in situ annealed under ultra high vacuum or ex situ annealed in a nitrogen atmosphere. The surface of the Ti 0.1 W 0.9 substrate was oxidized during sputter deposition of SiO 2 layer. Ti, W oxides consist of Ti 2 O 3 (Ti 3 O 5 ), TiO 2 , WO 2 , and WO 3 . The WO 3 and Ti 2 O 3 decomposed into metallic W and Ti at 400 and 500°C, respectively. The breakdown voltage of the antifuse decreased as the annealing temperature increased, due to the thinning of dielectric layer resulted from the decomposition of Ti, W oxides and the formation of metallic W and Ti. Annealing at 600°C caused the reaction between metallic (Ti,W) and SiO 2 layer and formed elemental silicon in the dielectric layer, where SiO 2 layer completely lost its dielectric property. The breakdown of dielectric property might form a metallic channel in the SiO 2 film, which mainly contains metallic W, Ti, and Si.

AB - The effects of annealing temperature on the interfacial reactions and the antifuse I-V characteristics of ultra thin SiO 2 layer deposited on Ti 0.1 W 0.9 substrate were investigated. The interfacial reactions were analyzed using x-ray photoelectron spectroscopy and Auger electron spectroscopy with the sample which is in situ annealed under ultra high vacuum or ex situ annealed in a nitrogen atmosphere. The surface of the Ti 0.1 W 0.9 substrate was oxidized during sputter deposition of SiO 2 layer. Ti, W oxides consist of Ti 2 O 3 (Ti 3 O 5 ), TiO 2 , WO 2 , and WO 3 . The WO 3 and Ti 2 O 3 decomposed into metallic W and Ti at 400 and 500°C, respectively. The breakdown voltage of the antifuse decreased as the annealing temperature increased, due to the thinning of dielectric layer resulted from the decomposition of Ti, W oxides and the formation of metallic W and Ti. Annealing at 600°C caused the reaction between metallic (Ti,W) and SiO 2 layer and formed elemental silicon in the dielectric layer, where SiO 2 layer completely lost its dielectric property. The breakdown of dielectric property might form a metallic channel in the SiO 2 film, which mainly contains metallic W, Ti, and Si.

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