The effects of annealing temperature on the interfacial reactions and the antifuse I-V characteristics of ultra thin SiO 2 layer deposited on Ti 0.1 W 0.9 substrate were investigated. The interfacial reactions were analyzed using x-ray photoelectron spectroscopy and Auger electron spectroscopy with the sample which is in situ annealed under ultra high vacuum or ex situ annealed in a nitrogen atmosphere. The surface of the Ti 0.1 W 0.9 substrate was oxidized during sputter deposition of SiO 2 layer. Ti, W oxides consist of Ti 2 O 3 (Ti 3 O 5 ), TiO 2 , WO 2 , and WO 3 . The WO 3 and Ti 2 O 3 decomposed into metallic W and Ti at 400 and 500°C, respectively. The breakdown voltage of the antifuse decreased as the annealing temperature increased, due to the thinning of dielectric layer resulted from the decomposition of Ti, W oxides and the formation of metallic W and Ti. Annealing at 600°C caused the reaction between metallic (Ti,W) and SiO 2 layer and formed elemental silicon in the dielectric layer, where SiO 2 layer completely lost its dielectric property. The breakdown of dielectric property might form a metallic channel in the SiO 2 film, which mainly contains metallic W, Ti, and Si.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)