Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature

Dae Kyoung Kim, Yu Seon Kang, Hang Kyu Kang, Mann-Ho Cho, Dae Hong Ko, Sun Young Lee, Dong Chan Kim, Chang Soo Kim, Jung Hye Seo

Research output: Contribution to journalArticle

Abstract

Hf-based dielectrics were prepared using atomic layer deposition in order to investigate the effect of Si incorporation on the interfacial reaction and thermal stability in HfO2 films on SiGe substrates. Two concentrations [100% HfO2 and 50% HfO2 50% SiO 2(HfSiO)] were used on strained Si0.7Ge0.3 substrates; a partially-crystalline phase was observed in the as-grown HfO 2 film, and was not observed in the as-grown HfSiO film. Phase separation between the SiOx and HfOx in HfSiO film did occur, however, when the annealing temperature was increased to over 900 °C, leading to the out-diffusion of Si from the Si0.7Ge0.3 substrate and the formation of a Ge-rich layer at the interface between HfSiO and Si0.7Ge0.3. Finally, the strain in the Si 0.7Ge0.3 substrate was relaxed, and interfacial states greatly increased in HfSiO/Si0.7Ge0.3 with the 900 °C anneal.

Original languageEnglish
Pages (from-to)2499-2502
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number11
DOIs
Publication statusPublished - 2013 Nov 1

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Strain relaxation
Silicates
Surface chemistry
silicates
Annealing
annealing
Substrates
Temperature
temperature
Atomic layer deposition
atomic layer epitaxy
Phase separation
Thermodynamic stability
thermal stability
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Dae Kyoung ; Kang, Yu Seon ; Kang, Hang Kyu ; Cho, Mann-Ho ; Ko, Dae Hong ; Lee, Sun Young ; Kim, Dong Chan ; Kim, Chang Soo ; Seo, Jung Hye. / Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature. In: Physica Status Solidi (A) Applications and Materials Science. 2013 ; Vol. 210, No. 11. pp. 2499-2502.
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abstract = "Hf-based dielectrics were prepared using atomic layer deposition in order to investigate the effect of Si incorporation on the interfacial reaction and thermal stability in HfO2 films on SiGe substrates. Two concentrations [100{\%} HfO2 and 50{\%} HfO2 50{\%} SiO 2(HfSiO)] were used on strained Si0.7Ge0.3 substrates; a partially-crystalline phase was observed in the as-grown HfO 2 film, and was not observed in the as-grown HfSiO film. Phase separation between the SiOx and HfOx in HfSiO film did occur, however, when the annealing temperature was increased to over 900 °C, leading to the out-diffusion of Si from the Si0.7Ge0.3 substrate and the formation of a Ge-rich layer at the interface between HfSiO and Si0.7Ge0.3. Finally, the strain in the Si 0.7Ge0.3 substrate was relaxed, and interfacial states greatly increased in HfSiO/Si0.7Ge0.3 with the 900 °C anneal.",
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Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature. / Kim, Dae Kyoung; Kang, Yu Seon; Kang, Hang Kyu; Cho, Mann-Ho; Ko, Dae Hong; Lee, Sun Young; Kim, Dong Chan; Kim, Chang Soo; Seo, Jung Hye.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 11, 01.11.2013, p. 2499-2502.

Research output: Contribution to journalArticle

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AU - Kim, Dae Kyoung

AU - Kang, Yu Seon

AU - Kang, Hang Kyu

AU - Cho, Mann-Ho

AU - Ko, Dae Hong

AU - Lee, Sun Young

AU - Kim, Dong Chan

AU - Kim, Chang Soo

AU - Seo, Jung Hye

PY - 2013/11/1

Y1 - 2013/11/1

N2 - Hf-based dielectrics were prepared using atomic layer deposition in order to investigate the effect of Si incorporation on the interfacial reaction and thermal stability in HfO2 films on SiGe substrates. Two concentrations [100% HfO2 and 50% HfO2 50% SiO 2(HfSiO)] were used on strained Si0.7Ge0.3 substrates; a partially-crystalline phase was observed in the as-grown HfO 2 film, and was not observed in the as-grown HfSiO film. Phase separation between the SiOx and HfOx in HfSiO film did occur, however, when the annealing temperature was increased to over 900 °C, leading to the out-diffusion of Si from the Si0.7Ge0.3 substrate and the formation of a Ge-rich layer at the interface between HfSiO and Si0.7Ge0.3. Finally, the strain in the Si 0.7Ge0.3 substrate was relaxed, and interfacial states greatly increased in HfSiO/Si0.7Ge0.3 with the 900 °C anneal.

AB - Hf-based dielectrics were prepared using atomic layer deposition in order to investigate the effect of Si incorporation on the interfacial reaction and thermal stability in HfO2 films on SiGe substrates. Two concentrations [100% HfO2 and 50% HfO2 50% SiO 2(HfSiO)] were used on strained Si0.7Ge0.3 substrates; a partially-crystalline phase was observed in the as-grown HfO 2 film, and was not observed in the as-grown HfSiO film. Phase separation between the SiOx and HfOx in HfSiO film did occur, however, when the annealing temperature was increased to over 900 °C, leading to the out-diffusion of Si from the Si0.7Ge0.3 substrate and the formation of a Ge-rich layer at the interface between HfSiO and Si0.7Ge0.3. Finally, the strain in the Si 0.7Ge0.3 substrate was relaxed, and interfacial states greatly increased in HfSiO/Si0.7Ge0.3 with the 900 °C anneal.

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