Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

C. Y. Kim, Sangwan Cho, Mann-Ho Cho, K. B. Chung, C. H. An, H. Kim, H. J. Lee, Dae Hong Ko

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.

Original languageEnglish
Article number192902
JournalApplied Physics Letters
Volume93
Issue number19
DOIs
Publication statusPublished - 2008 Nov 21

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valence
high resolution
atomic layer epitaxy
x ray spectroscopy
photoelectron spectroscopy
transmission electron microscopy
annealing
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate",
abstract = "The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.",
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Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate. / Kim, C. Y.; Cho, Sangwan; Cho, Mann-Ho; Chung, K. B.; An, C. H.; Kim, H.; Lee, H. J.; Ko, Dae Hong.

In: Applied Physics Letters, Vol. 93, No. 19, 192902, 21.11.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

AU - Kim, C. Y.

AU - Cho, Sangwan

AU - Cho, Mann-Ho

AU - Chung, K. B.

AU - An, C. H.

AU - Kim, H.

AU - Lee, H. J.

AU - Ko, Dae Hong

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AB - The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.

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