Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor

Y. S. Kang, C. Y. Kim, Mann-Ho Cho, C. H. An, H. Kim, J. H. Seo, C. S. Kim, T. G. Lee, Dae Hong Ko

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The effects of the postnitridation annealing treatment of atomic-layer-deposited HfO 2InP (001) were investigated as a function of annealing temperature in an NH 3 ambient. The levels of interfacial oxides of In(PO 3) 3 and InPO 4 were gradually increased through re-oxidation process by the diffusion of oxygen impurities with increasing temperature. Especially, well-ordered hexagonal InN structure with (101) single direction was formed at HfO 2InP interface due to chemical reactions between In 2O 3 and the NH 3 vapor after a rapid thermal annealing at 600C. The diffusion of interfacial In and P oxides into HfO 2 film was found to be suppressed by presence of thick InN layer.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number4
Publication statusPublished - 2012 Feb 27


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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