Interfacial reactions between WN x and poly Si 1-xGe x films

Sung Kwan Kang, Byoung Gi Min, Jae Jin Kim, Dae Hong Ko, Han Byul Kang, Cheol Woong Yang, Mann Ho Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Interfacial reactions between WN x/poly Si films with the annealing conditions were studied. High resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were used. It was found that after short period of annealing the island-type precipitation was observed. The results also show that Si-N layer become thinner and island-type precipitation become a continuous layer when the annealing time was extended.

Original languageEnglish
Pages (from-to)7071-7075
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number11
DOIs
Publication statusPublished - 2003 Dec 1

Fingerprint

annealing
photoelectron spectroscopy
transmission electron microscopy
high resolution
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kang, Sung Kwan ; Min, Byoung Gi ; Kim, Jae Jin ; Ko, Dae Hong ; Kang, Han Byul ; Yang, Cheol Woong ; Cho, Mann Ho. / Interfacial reactions between WN x and poly Si 1-xGe x films. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 11. pp. 7071-7075.
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Interfacial reactions between WN x and poly Si 1-xGe x films. / Kang, Sung Kwan; Min, Byoung Gi; Kim, Jae Jin; Ko, Dae Hong; Kang, Han Byul; Yang, Cheol Woong; Cho, Mann Ho.

In: Journal of Applied Physics, Vol. 94, No. 11, 01.12.2003, p. 7071-7075.

Research output: Contribution to journalArticle

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AU - Min, Byoung Gi

AU - Kim, Jae Jin

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AU - Yang, Cheol Woong

AU - Cho, Mann Ho

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