Interfacial reactions between WN x and poly Si 1-xGe x films

Sung Kwan Kang, Byoung Gi Min, Jae Jin Kim, Dae Hong Ko, Han Byul Kang, Cheol Woong Yang, Mann Ho Cho

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Abstract

Interfacial reactions between WN x/poly Si films with the annealing conditions were studied. High resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) were used. It was found that after short period of annealing the island-type precipitation was observed. The results also show that Si-N layer become thinner and island-type precipitation become a continuous layer when the annealing time was extended.

Original languageEnglish
Pages (from-to)7071-7075
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number11
DOIs
Publication statusPublished - 2003 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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