Interfacial reactions in annealed W/WNx/poly Si1-xGex

S. K. Kang, J. J. Kim, B. C. Min, D. H. Ko, H. B. Kang, C. W. Yang, T. H. Ahn, T. W. Lee, Y. H. Lee

Research output: Contribution to journalArticle

Abstract

We investigated the interracial reactions in W/WNx/poly Si1-xGex by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WNx films decreased to about 5 %, and an interracial layer was formed between the WNx and the poly Si capping layer due to reactions between the WNx and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.

Original languageEnglish
Pages (from-to)184-187
Number of pages4
JournalJournal of the Korean Physical Society
Volume40
Issue number1
Publication statusPublished - 2002 Jan

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Kang, S. K., Kim, J. J., Min, B. C., Ko, D. H., Kang, H. B., Yang, C. W., Ahn, T. H., Lee, T. W., & Lee, Y. H. (2002). Interfacial reactions in annealed W/WNx/poly Si1-xGex. Journal of the Korean Physical Society, 40(1), 184-187.