Interfacial reactions in annealed W/WN x /poly Si 1-x Ge x

S. K. Kang, J. J. Kim, B. C. Min, Dae Hong Ko, H. B. Kang, C. W. Yang, T. H. Ahn, T. W. Lee, Y. H. Lee

Research output: Contribution to journalArticle

Abstract

We investigated the interracial reactions in W/WN x /poly Si 1-x Ge x by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WN x films decreased to about 5 %, and an interracial layer was formed between the WN x and the poly Si capping layer due to reactions between the WN x and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.

Original languageEnglish
Pages (from-to)184-187
Number of pages4
JournalJournal of the Korean Physical Society
Volume40
Issue number1
Publication statusPublished - 2002 Jan 1

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x ray spectroscopy
Auger spectroscopy
electron spectroscopy
photoelectron spectroscopy
electron energy
transmission electron microscopy
annealing
high resolution
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kang, S. K., Kim, J. J., Min, B. C., Ko, D. H., Kang, H. B., Yang, C. W., ... Lee, Y. H. (2002). Interfacial reactions in annealed W/WN x /poly Si 1-x Ge x Journal of the Korean Physical Society, 40(1), 184-187.
Kang, S. K. ; Kim, J. J. ; Min, B. C. ; Ko, Dae Hong ; Kang, H. B. ; Yang, C. W. ; Ahn, T. H. ; Lee, T. W. ; Lee, Y. H. / Interfacial reactions in annealed W/WN x /poly Si 1-x Ge x In: Journal of the Korean Physical Society. 2002 ; Vol. 40, No. 1. pp. 184-187.
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abstract = "We investigated the interracial reactions in W/WN x /poly Si 1-x Ge x by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WN x films decreased to about 5 {\%}, and an interracial layer was formed between the WN x and the poly Si capping layer due to reactions between the WN x and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.",
author = "Kang, {S. K.} and Kim, {J. J.} and Min, {B. C.} and Ko, {Dae Hong} and Kang, {H. B.} and Yang, {C. W.} and Ahn, {T. H.} and Lee, {T. W.} and Lee, {Y. H.}",
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Kang, SK, Kim, JJ, Min, BC, Ko, DH, Kang, HB, Yang, CW, Ahn, TH, Lee, TW & Lee, YH 2002, ' Interfacial reactions in annealed W/WN x /poly Si 1-x Ge x ', Journal of the Korean Physical Society, vol. 40, no. 1, pp. 184-187.

Interfacial reactions in annealed W/WN x /poly Si 1-x Ge x . / Kang, S. K.; Kim, J. J.; Min, B. C.; Ko, Dae Hong; Kang, H. B.; Yang, C. W.; Ahn, T. H.; Lee, T. W.; Lee, Y. H.

In: Journal of the Korean Physical Society, Vol. 40, No. 1, 01.01.2002, p. 184-187.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interfacial reactions in annealed W/WN x /poly Si 1-x Ge x

AU - Kang, S. K.

AU - Kim, J. J.

AU - Min, B. C.

AU - Ko, Dae Hong

AU - Kang, H. B.

AU - Yang, C. W.

AU - Ahn, T. H.

AU - Lee, T. W.

AU - Lee, Y. H.

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N2 - We investigated the interracial reactions in W/WN x /poly Si 1-x Ge x by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WN x films decreased to about 5 %, and an interracial layer was formed between the WN x and the poly Si capping layer due to reactions between the WN x and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.

AB - We investigated the interracial reactions in W/WN x /poly Si 1-x Ge x by using X-ray photoelectron spectroscopy, Auger electron spectroscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectrometry. After annealing treatment, the N composition in the WN x films decreased to about 5 %, and an interracial layer was formed between the WN x and the poly Si capping layer due to reactions between the WN x and the poly Si capping. The interracial layer was found to be composed of W, Si, Ge, and N by analyzing the Si and the Ge binding states and by using EDX.

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M3 - Article

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Kang SK, Kim JJ, Min BC, Ko DH, Kang HB, Yang CW et al. Interfacial reactions in annealed W/WN x /poly Si 1-x Ge x Journal of the Korean Physical Society. 2002 Jan 1;40(1):184-187.