We investigated the interfacial reaction between ICB deposited Y2O3 film and chemically oxidized (100) silicon substrates upon annealing in Ar and O2 gas ambients using transmission electron microscopy (TEM) and X-ray diffractometry (XRD). We observed the growth of the SiO2 layer between the Y2O3 films and the Si substrate after annealing treatments in O2 gas and Ar gas ambients. The growth of the SiO2 layer is due to the diffusion of the oxygen species through Y2O3 films, and subsequent reaction with the silicon substrates. We also found that yttrium silicate layer is formed between the SiO2 layer and Y2O3 films upon annealing treatments.
|Number of pages||4|
|Journal||Thin Solid Films|
|Publication status||Published - 1999 Sept 29|
Bibliographical noteFunding Information:
This research is funded by Korean Science and Education Foundation, which we gratefully appreciate. We also thank Prof. R. Sinclair for letting us access to the transmission electron microscopy at Stanford University.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry