Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems

Sung Kwan Kang; Dae Hong Ko; Eun Ha Kim; Man Ho Cho; C. N. Whang

doi:10.1016/S0040-6090(99)00418-6

Interfacial reactions in the thin film Y₂O₃ on chemically oxidized Si(100) substrate systems

Sung Kwan Kang, Dae Hong Ko, Eun Ha Kim, Man Ho Cho, C. N. Whang

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

We investigated the interfacial reaction between ICB deposited Y₂O₃ film and chemically oxidized (100) silicon substrates upon annealing in Ar and O₂ gas ambients using transmission electron microscopy (TEM) and X-ray diffractometry (XRD). We observed the growth of the SiO₂ layer between the Y₂O₃ films and the Si substrate after annealing treatments in O₂ gas and Ar gas ambients. The growth of the SiO₂ layer is due to the diffusion of the oxygen species through Y₂O₃ films, and subsequent reaction with the silicon substrates. We also found that yttrium silicate layer is formed between the SiO₂ layer and Y₂O₃ films upon annealing treatments.

Original language	English
Pages (from-to)	8-11
Number of pages	4
Journal	Thin Solid Films
Volume	353
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(99)00418-6
Publication status	Published - 1999 Sept 29

Bibliographical note

Funding Information:
This research is funded by Korean Science and Education Foundation, which we gratefully appreciate. We also thank Prof. R. Sinclair for letting us access to the transmission electron microscopy at Stanford University.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(99)00418-6

Cite this

@article{ae3e88493c70432aa1021418e1c2a85c,

title = "Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems",

abstract = "We investigated the interfacial reaction between ICB deposited Y2O3 film and chemically oxidized (100) silicon substrates upon annealing in Ar and O2 gas ambients using transmission electron microscopy (TEM) and X-ray diffractometry (XRD). We observed the growth of the SiO2 layer between the Y2O3 films and the Si substrate after annealing treatments in O2 gas and Ar gas ambients. The growth of the SiO2 layer is due to the diffusion of the oxygen species through Y2O3 films, and subsequent reaction with the silicon substrates. We also found that yttrium silicate layer is formed between the SiO2 layer and Y2O3 films upon annealing treatments.",

author = "Kang, {Sung Kwan} and Ko, {Dae Hong} and Kim, {Eun Ha} and {Ho Cho}, Man and Whang, {C. N.}",

note = "Funding Information: This research is funded by Korean Science and Education Foundation, which we gratefully appreciate. We also thank Prof. R. Sinclair for letting us access to the transmission electron microscopy at Stanford University.",

year = "1999",

month = sep,

day = "29",

doi = "10.1016/S0040-6090(99)00418-6",

language = "English",

volume = "353",

pages = "8--11",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems

AU - Kang, Sung Kwan

AU - Ko, Dae Hong

AU - Kim, Eun Ha

AU - Ho Cho, Man

AU - Whang, C. N.

N1 - Funding Information: This research is funded by Korean Science and Education Foundation, which we gratefully appreciate. We also thank Prof. R. Sinclair for letting us access to the transmission electron microscopy at Stanford University.

PY - 1999/9/29

Y1 - 1999/9/29

N2 - We investigated the interfacial reaction between ICB deposited Y2O3 film and chemically oxidized (100) silicon substrates upon annealing in Ar and O2 gas ambients using transmission electron microscopy (TEM) and X-ray diffractometry (XRD). We observed the growth of the SiO2 layer between the Y2O3 films and the Si substrate after annealing treatments in O2 gas and Ar gas ambients. The growth of the SiO2 layer is due to the diffusion of the oxygen species through Y2O3 films, and subsequent reaction with the silicon substrates. We also found that yttrium silicate layer is formed between the SiO2 layer and Y2O3 films upon annealing treatments.

AB - We investigated the interfacial reaction between ICB deposited Y2O3 film and chemically oxidized (100) silicon substrates upon annealing in Ar and O2 gas ambients using transmission electron microscopy (TEM) and X-ray diffractometry (XRD). We observed the growth of the SiO2 layer between the Y2O3 films and the Si substrate after annealing treatments in O2 gas and Ar gas ambients. The growth of the SiO2 layer is due to the diffusion of the oxygen species through Y2O3 films, and subsequent reaction with the silicon substrates. We also found that yttrium silicate layer is formed between the SiO2 layer and Y2O3 films upon annealing treatments.

UR - http://www.scopus.com/inward/record.url?scp=0033310960&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033310960&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00418-6

DO - 10.1016/S0040-6090(99)00418-6

M3 - Article

AN - SCOPUS:0033310960

SN - 0040-6090

VL - 353

SP - 8

EP - 11

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -