This study presents an examination of the interfacial and electrical properties of HfO2 films grown by plasma-enhanced atomic layer deposition with tetrakis(diethylmethylamino) hafnium and O2 precursors on GaAs substrates cleaned with HF and then (NH4) 2S cleaning for three different dipping times. Systematic X-ray photoelectron spectroscopy analyses both before and after the HfO2 deposition revealed that the optimal cleaning time in terms of the removal of the As- and Ga-oxides was significantly reduced by the partial self-cleaning process that occurred at a substantially lower deposition temperature of only 200C, possibly due to the plasma effect. The frequency dispersion characteristics were strongly dependent on the cleaning method, however, the hysteresis characteristics were not.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2011|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry