Interfacial self-Cleaning during PEALD HfO2 process on GaAs using TDMAH/O2 with different (NH4)2S cleaning time

Young Chul Byun; Chee Hong An; Ju Yun Choi; Chung Yi Kim; Mann Ho Cho; Hyoungsub Kim

doi:10.1149/1.3569751

Interfacial self-Cleaning during PEALD HfO₂ process on GaAs using TDMAH/O₂ with different (NH₄)₂S cleaning time

Young Chul Byun, Chee Hong An, Ju Yun Choi, Chung Yi Kim, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This study presents an examination of the interfacial and electrical properties of HfO₂ films grown by plasma-enhanced atomic layer deposition with tetrakis(diethylmethylamino) hafnium and O₂ precursors on GaAs substrates cleaned with HF and then (NH₄) ₂S cleaning for three different dipping times. Systematic X-ray photoelectron spectroscopy analyses both before and after the HfO₂ deposition revealed that the optimal cleaning time in terms of the removal of the As- and Ga-oxides was significantly reduced by the partial self-cleaning process that occurred at a substantially lower deposition temperature of only 200C, possibly due to the plasma effect. The frequency dispersion characteristics were strongly dependent on the cleaning method, however, the hysteresis characteristics were not.

Original language	English
Pages (from-to)	G141-G145
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	6
DOIs	https://doi.org/10.1149/1.3569751
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3569751

Cite this

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title = "Interfacial self-Cleaning during PEALD HfO2 process on GaAs using TDMAH/O2 with different (NH4)2S cleaning time",

abstract = "This study presents an examination of the interfacial and electrical properties of HfO2 films grown by plasma-enhanced atomic layer deposition with tetrakis(diethylmethylamino) hafnium and O2 precursors on GaAs substrates cleaned with HF and then (NH4) 2S cleaning for three different dipping times. Systematic X-ray photoelectron spectroscopy analyses both before and after the HfO2 deposition revealed that the optimal cleaning time in terms of the removal of the As- and Ga-oxides was significantly reduced by the partial self-cleaning process that occurred at a substantially lower deposition temperature of only 200C, possibly due to the plasma effect. The frequency dispersion characteristics were strongly dependent on the cleaning method, however, the hysteresis characteristics were not.",

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T1 - Interfacial self-Cleaning during PEALD HfO2 process on GaAs using TDMAH/O2 with different (NH4)2S cleaning time

AU - Byun, Young Chul

AU - An, Chee Hong

AU - Choi, Ju Yun

AU - Kim, Chung Yi

AU - Cho, Mann Ho

AU - Kim, Hyoungsub

PY - 2011

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AB - This study presents an examination of the interfacial and electrical properties of HfO2 films grown by plasma-enhanced atomic layer deposition with tetrakis(diethylmethylamino) hafnium and O2 precursors on GaAs substrates cleaned with HF and then (NH4) 2S cleaning for three different dipping times. Systematic X-ray photoelectron spectroscopy analyses both before and after the HfO2 deposition revealed that the optimal cleaning time in terms of the removal of the As- and Ga-oxides was significantly reduced by the partial self-cleaning process that occurred at a substantially lower deposition temperature of only 200C, possibly due to the plasma effect. The frequency dispersion characteristics were strongly dependent on the cleaning method, however, the hysteresis characteristics were not.

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