Interfacial spin polarization and resistance in lateral spin-valves incorporating Bi and BiPb thin films

Jin Seo Noh, Kyoung Il Lee, Wooyoung Lee

Research output: Contribution to journalArticle

Abstract

Electrical spin injection and detection have been investigated at cryogenic temperatures using a lateral spin-valve structure. Either Bi or BiPb was used as a nonmagnetic spin medium, while CoFe and NiFe were employed as the spin injector and spin detector, respectively. A large magnetoresistance signal corresponding to ΔR=1.2 m was detected from the BiPb-based spin-valves. From this result, a large spin diffusion length of 230 μm and a high interfacial spin polarization of 10% were derived. From an independent calculation, it was found that the interfacial spin polarization and the associated spin accumulation are strongly correlated with the interfacial resistance.

Original languageEnglish
Article number083902
JournalJournal of Applied Physics
Volume108
Issue number8
DOIs
Publication statusPublished - 2010 Oct 15

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polarization
thin films
cryogenic temperature
diffusion length
injectors
injection
detectors

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Electrical spin injection and detection have been investigated at cryogenic temperatures using a lateral spin-valve structure. Either Bi or BiPb was used as a nonmagnetic spin medium, while CoFe and NiFe were employed as the spin injector and spin detector, respectively. A large magnetoresistance signal corresponding to ΔR=1.2 m was detected from the BiPb-based spin-valves. From this result, a large spin diffusion length of 230 μm and a high interfacial spin polarization of 10{\%} were derived. From an independent calculation, it was found that the interfacial spin polarization and the associated spin accumulation are strongly correlated with the interfacial resistance.",
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Interfacial spin polarization and resistance in lateral spin-valves incorporating Bi and BiPb thin films. / Noh, Jin Seo; Lee, Kyoung Il; Lee, Wooyoung.

In: Journal of Applied Physics, Vol. 108, No. 8, 083902, 15.10.2010.

Research output: Contribution to journalArticle

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T1 - Interfacial spin polarization and resistance in lateral spin-valves incorporating Bi and BiPb thin films

AU - Noh, Jin Seo

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AU - Lee, Wooyoung

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Y1 - 2010/10/15

N2 - Electrical spin injection and detection have been investigated at cryogenic temperatures using a lateral spin-valve structure. Either Bi or BiPb was used as a nonmagnetic spin medium, while CoFe and NiFe were employed as the spin injector and spin detector, respectively. A large magnetoresistance signal corresponding to ΔR=1.2 m was detected from the BiPb-based spin-valves. From this result, a large spin diffusion length of 230 μm and a high interfacial spin polarization of 10% were derived. From an independent calculation, it was found that the interfacial spin polarization and the associated spin accumulation are strongly correlated with the interfacial resistance.

AB - Electrical spin injection and detection have been investigated at cryogenic temperatures using a lateral spin-valve structure. Either Bi or BiPb was used as a nonmagnetic spin medium, while CoFe and NiFe were employed as the spin injector and spin detector, respectively. A large magnetoresistance signal corresponding to ΔR=1.2 m was detected from the BiPb-based spin-valves. From this result, a large spin diffusion length of 230 μm and a high interfacial spin polarization of 10% were derived. From an independent calculation, it was found that the interfacial spin polarization and the associated spin accumulation are strongly correlated with the interfacial resistance.

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