Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

Kimoon Lee, Min Suk Oh, Sung Jin Mun, Kwang H. Lee, Tae Woo Ha, Jae Hoon Kim, Sang Hee Ko Park, Chi Sun Hwang, Byoung H. Lee, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

Original languageEnglish
Pages (from-to)3260-3265
Number of pages6
JournalAdvanced Materials
Volume22
Issue number30
DOIs
Publication statusPublished - 2010 Aug 10

Fingerprint

Thin film transistors
Spectroscopy
Optical fibers
Photons
pentacene

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Kimoon ; Oh, Min Suk ; Mun, Sung Jin ; Lee, Kwang H. ; Ha, Tae Woo ; Kim, Jae Hoon ; Park, Sang Hee Ko ; Hwang, Chi Sun ; Lee, Byoung H. ; Sung, Myung M. ; Im, Seongil. / Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy. In: Advanced Materials. 2010 ; Vol. 22, No. 30. pp. 3260-3265.
@article{c275c57a6dff4ca9a538b5b5b76e0cc9,
title = "Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy",
abstract = "Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)",
author = "Kimoon Lee and Oh, {Min Suk} and Mun, {Sung Jin} and Lee, {Kwang H.} and Ha, {Tae Woo} and Kim, {Jae Hoon} and Park, {Sang Hee Ko} and Hwang, {Chi Sun} and Lee, {Byoung H.} and Sung, {Myung M.} and Seongil Im",
year = "2010",
month = "8",
day = "10",
doi = "10.1002/adma.201000722",
language = "English",
volume = "22",
pages = "3260--3265",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "30",

}

Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy. / Lee, Kimoon; Oh, Min Suk; Mun, Sung Jin; Lee, Kwang H.; Ha, Tae Woo; Kim, Jae Hoon; Park, Sang Hee Ko; Hwang, Chi Sun; Lee, Byoung H.; Sung, Myung M.; Im, Seongil.

In: Advanced Materials, Vol. 22, No. 30, 10.08.2010, p. 3260-3265.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Mun, Sung Jin

AU - Lee, Kwang H.

AU - Ha, Tae Woo

AU - Kim, Jae Hoon

AU - Park, Sang Hee Ko

AU - Hwang, Chi Sun

AU - Lee, Byoung H.

AU - Sung, Myung M.

AU - Im, Seongil

PY - 2010/8/10

Y1 - 2010/8/10

N2 - Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

AB - Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

UR - http://www.scopus.com/inward/record.url?scp=77955399765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955399765&partnerID=8YFLogxK

U2 - 10.1002/adma.201000722

DO - 10.1002/adma.201000722

M3 - Article

VL - 22

SP - 3260

EP - 3265

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 30

ER -