Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

Kimoon Lee, Min Suk Oh, Sung Jin Mun, Kwang H. Lee, Tae Woo Ha, Jae Hoon Kim, Sang Hee Ko Park, Chi Sun Hwang, Byoung H. Lee, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

Original languageEnglish
Pages (from-to)3260-3265
Number of pages6
JournalAdvanced Materials
Volume22
Issue number30
DOIs
Publication statusPublished - 2010 Aug 10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy'. Together they form a unique fingerprint.

  • Cite this