Interfacial trap density-of-states in pentacene- and ZnO-based thin-film transistors measured via novel photo-excited charge-collection spectroscopy

Kimoon Lee, Min Suk Oh, Sung Jin Mun, Kwang H. Lee, Tae Woo Ha, Jae Hoon Kim, Sang Hee Ko Park, Chi Sun Hwang, Byoung H. Lee, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticle

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Direct quantitative mapping of the density-of-states, named the photo-excited chargecollection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors. (Figure Presented)

Original languageEnglish
Pages (from-to)3260-3265
Number of pages6
JournalAdvanced Materials
Issue number30
Publication statusPublished - 2010 Aug 10


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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