Interference effects in reflectance line shapes from ZnSe/GaAs epilayers

J. H. Song, E. D. Sim, Su Houng Lee, Soo Kyung Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The reflectance spectroscopy is performed at 77 K on ZnSe epilayers of different thicknesses grown on GaAs substrates. The exciton line shapes of the reflectance spectra change dramatically with the epilayer thickness. This observation suggests that the interference effects between the reflected waves from the surface and from the interface play an important role on the exciton line shape of the reflectance spectra. To analyze the change in the exciton line shapes quantitatively, the reflectance spectra were calculated using a simple oscillator model for a dielectric function and considering a multiple reflection. Calculated line shapes of the reflectance spectra show good agreement with the observations.

Original languageEnglish
Pages (from-to)125-128
Number of pages4
JournalSolid State Communications
Volume107
Issue number3
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Epilayers
line shape
reflectance
interference
Excitons
excitons
reflected waves
oscillators
gallium arsenide
Spectroscopy
spectroscopy
Substrates
LDS 751

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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Interference effects in reflectance line shapes from ZnSe/GaAs epilayers. / Song, J. H.; Sim, E. D.; Lee, Su Houng; Chang, Soo Kyung.

In: Solid State Communications, Vol. 107, No. 3, 01.01.1998, p. 125-128.

Research output: Contribution to journalArticle

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