Interlayer-assisted atomic layer deposition of MgO as a magnetic tunneling junction insulators

Seung Wook Ryu, Jeong Gyu Song, Hyun Gu Kim, Hyungjun Kim, Han Bo Ram Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).

Original languageEnglish
Pages (from-to)505-510
Number of pages6
JournalJournal of Alloys and Compounds
Volume747
DOIs
Publication statusPublished - 2018 May 30

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Atomic layer deposition
Oxidation
Plasmas
Tunnelling magnetoresistance
Substrates
Diffraction patterns
Electron microscopy
X ray diffraction
Degradation

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ryu, Seung Wook ; Song, Jeong Gyu ; Kim, Hyun Gu ; Kim, Hyungjun ; Lee, Han Bo Ram. / Interlayer-assisted atomic layer deposition of MgO as a magnetic tunneling junction insulators. In: Journal of Alloys and Compounds. 2018 ; Vol. 747. pp. 505-510.
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abstract = "The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).",
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Interlayer-assisted atomic layer deposition of MgO as a magnetic tunneling junction insulators. / Ryu, Seung Wook; Song, Jeong Gyu; Kim, Hyun Gu; Kim, Hyungjun; Lee, Han Bo Ram.

In: Journal of Alloys and Compounds, Vol. 747, 30.05.2018, p. 505-510.

Research output: Contribution to journalArticle

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AB - The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).

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