Abstract
The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).
| Original language | English |
|---|---|
| Pages (from-to) | 505-510 |
| Number of pages | 6 |
| Journal | Journal of Alloys and Compounds |
| Volume | 747 |
| DOIs | |
| Publication status | Published - 2018 May 30 |
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
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Interlayer-assisted atomic layer deposition of MgO as a magnetic tunneling junction insulators. / Ryu, Seung Wook; Song, Jeong Gyu; Kim, Hyun Gu; Kim, Hyungjun; Lee, Han Bo Ram.
In: Journal of Alloys and Compounds, Vol. 747, 30.05.2018, p. 505-510.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interlayer-assisted atomic layer deposition of MgO as a magnetic tunneling junction insulators
AU - Ryu, Seung Wook
AU - Song, Jeong Gyu
AU - Kim, Hyun Gu
AU - Kim, Hyungjun
AU - Lee, Han Bo Ram
PY - 2018/5/30
Y1 - 2018/5/30
N2 - The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).
AB - The growth behavior of MgO deposited on a Mg interlayer by plasma-enhanced atomic layer deposition (PE-ALD) was investigated to improve the MgO layer quality for magnetic tunneling junction (MTJ) applications. The Mg interlayer was inserted beneath the PE-ALD MgO film to prevent the oxidation of the bottom substrate layer. The chemical bonding status, elemental depth profile, and electron microscopy results for the PE-ALD Mg/MgO stack indicate that the Mg interlayer successfully blocked the oxidation of the substrate via its transformation to MgO. In addition, a change of the preferred orientation from (111) to (200) was observed in the X-ray diffraction pattern when the Mg interlayer was applied. This was attributed to the (200)-preferred orientation of the MgO formed through the oxidation of the Mg interlayer. The use of Mg interlayer is aim to prevent the degradation of the tunneling magneto-resistance properties by not only protecting the bottom layer (i.e., = CoFeB film in MTJs) from oxidation but also changing the preferred orientation from (111) to (200).
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UR - http://www.scopus.com/inward/citedby.url?scp=85043388581&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2018.03.021
DO - 10.1016/j.jallcom.2018.03.021
M3 - Article
AN - SCOPUS:85043388581
VL - 747
SP - 505
EP - 510
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
ER -