Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors

Hwa Sung Lee, Kyungmin Park, Jong Dae Kim, Taehwan Han, Kwang Hee Ryu, Ho Sun Lim, Dong Ryeol Lee, Young Je Kwark, Jeong Ho Cho

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We have demonstrated the preparation of interpenetrating polymer network (IPN) dielectrics for use in high-performance organic field-effect transistors by blending commercially available polymers (PMMA, PtBMA, and PS) with the crosslinkable polymeric silsesquiazane (SSQZ). This facile blending method is a powerful means of enhancing the electrical strength of polymer dielectrics due to the formation of a siloxane network structure interspersed among the polymer chains. We found that the leakage currents for the PMMA and PtBMA gate dielectrics blended with SSQZ significantly decreased, by as much as two orders of magnitude, compared with the pristine cases. These remarkable enhancements in the dielectric properties arose from decreases in the free volume and in the thermal dynamic motions of the polymer chains due to formation of the polysiloxane network. The IPN gate dielectrics provide a facile method for using commercially available polymers to fabricate polymer gate dielectrics with strong electrical strengths.

Original languageEnglish
Pages (from-to)6968-6974
Number of pages7
JournalJournal of Materials Chemistry
Volume21
Issue number19
DOIs
Publication statusPublished - 2011 May 21

Fingerprint

Organic field effect transistors
Interpenetrating polymer networks
Polymers
Gate dielectrics
Siloxanes
Polymethyl Methacrylate
Free volume
Leakage currents
Silicones
Dielectric properties

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Lee, Hwa Sung ; Park, Kyungmin ; Kim, Jong Dae ; Han, Taehwan ; Ryu, Kwang Hee ; Lim, Ho Sun ; Lee, Dong Ryeol ; Kwark, Young Je ; Cho, Jeong Ho. / Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors. In: Journal of Materials Chemistry. 2011 ; Vol. 21, No. 19. pp. 6968-6974.
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abstract = "We have demonstrated the preparation of interpenetrating polymer network (IPN) dielectrics for use in high-performance organic field-effect transistors by blending commercially available polymers (PMMA, PtBMA, and PS) with the crosslinkable polymeric silsesquiazane (SSQZ). This facile blending method is a powerful means of enhancing the electrical strength of polymer dielectrics due to the formation of a siloxane network structure interspersed among the polymer chains. We found that the leakage currents for the PMMA and PtBMA gate dielectrics blended with SSQZ significantly decreased, by as much as two orders of magnitude, compared with the pristine cases. These remarkable enhancements in the dielectric properties arose from decreases in the free volume and in the thermal dynamic motions of the polymer chains due to formation of the polysiloxane network. The IPN gate dielectrics provide a facile method for using commercially available polymers to fabricate polymer gate dielectrics with strong electrical strengths.",
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Lee, HS, Park, K, Kim, JD, Han, T, Ryu, KH, Lim, HS, Lee, DR, Kwark, YJ & Cho, JH 2011, 'Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors', Journal of Materials Chemistry, vol. 21, no. 19, pp. 6968-6974. https://doi.org/10.1039/c1jm10084j

Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors. / Lee, Hwa Sung; Park, Kyungmin; Kim, Jong Dae; Han, Taehwan; Ryu, Kwang Hee; Lim, Ho Sun; Lee, Dong Ryeol; Kwark, Young Je; Cho, Jeong Ho.

In: Journal of Materials Chemistry, Vol. 21, No. 19, 21.05.2011, p. 6968-6974.

Research output: Contribution to journalArticle

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AU - Cho, Jeong Ho

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