Abstract
We have demonstrated the preparation of interpenetrating polymer network (IPN) dielectrics for use in high-performance organic field-effect transistors by blending commercially available polymers (PMMA, PtBMA, and PS) with the crosslinkable polymeric silsesquiazane (SSQZ). This facile blending method is a powerful means of enhancing the electrical strength of polymer dielectrics due to the formation of a siloxane network structure interspersed among the polymer chains. We found that the leakage currents for the PMMA and PtBMA gate dielectrics blended with SSQZ significantly decreased, by as much as two orders of magnitude, compared with the pristine cases. These remarkable enhancements in the dielectric properties arose from decreases in the free volume and in the thermal dynamic motions of the polymer chains due to formation of the polysiloxane network. The IPN gate dielectrics provide a facile method for using commercially available polymers to fabricate polymer gate dielectrics with strong electrical strengths.
| Original language | English |
|---|---|
| Pages (from-to) | 6968-6974 |
| Number of pages | 7 |
| Journal | Journal of Materials Chemistry |
| Volume | 21 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2011 May 21 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry
Cite this
}
Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors. / Lee, Hwa Sung; Park, Kyungmin; Kim, Jong Dae; Han, Taehwan; Ryu, Kwang Hee; Lim, Ho Sun; Lee, Dong Ryeol; Kwark, Young Je; Cho, Jeong Ho.
In: Journal of Materials Chemistry, Vol. 21, No. 19, 21.05.2011, p. 6968-6974.Research output: Contribution to journal › Article
TY - JOUR
T1 - Interpenetrating polymer network dielectrics for high-performance organic field-effect transistors
AU - Lee, Hwa Sung
AU - Park, Kyungmin
AU - Kim, Jong Dae
AU - Han, Taehwan
AU - Ryu, Kwang Hee
AU - Lim, Ho Sun
AU - Lee, Dong Ryeol
AU - Kwark, Young Je
AU - Cho, Jeong Ho
PY - 2011/5/21
Y1 - 2011/5/21
N2 - We have demonstrated the preparation of interpenetrating polymer network (IPN) dielectrics for use in high-performance organic field-effect transistors by blending commercially available polymers (PMMA, PtBMA, and PS) with the crosslinkable polymeric silsesquiazane (SSQZ). This facile blending method is a powerful means of enhancing the electrical strength of polymer dielectrics due to the formation of a siloxane network structure interspersed among the polymer chains. We found that the leakage currents for the PMMA and PtBMA gate dielectrics blended with SSQZ significantly decreased, by as much as two orders of magnitude, compared with the pristine cases. These remarkable enhancements in the dielectric properties arose from decreases in the free volume and in the thermal dynamic motions of the polymer chains due to formation of the polysiloxane network. The IPN gate dielectrics provide a facile method for using commercially available polymers to fabricate polymer gate dielectrics with strong electrical strengths.
AB - We have demonstrated the preparation of interpenetrating polymer network (IPN) dielectrics for use in high-performance organic field-effect transistors by blending commercially available polymers (PMMA, PtBMA, and PS) with the crosslinkable polymeric silsesquiazane (SSQZ). This facile blending method is a powerful means of enhancing the electrical strength of polymer dielectrics due to the formation of a siloxane network structure interspersed among the polymer chains. We found that the leakage currents for the PMMA and PtBMA gate dielectrics blended with SSQZ significantly decreased, by as much as two orders of magnitude, compared with the pristine cases. These remarkable enhancements in the dielectric properties arose from decreases in the free volume and in the thermal dynamic motions of the polymer chains due to formation of the polysiloxane network. The IPN gate dielectrics provide a facile method for using commercially available polymers to fabricate polymer gate dielectrics with strong electrical strengths.
UR - http://www.scopus.com/inward/record.url?scp=79955393892&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955393892&partnerID=8YFLogxK
U2 - 10.1039/c1jm10084j
DO - 10.1039/c1jm10084j
M3 - Article
AN - SCOPUS:79955393892
VL - 21
SP - 6968
EP - 6974
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
SN - 0959-9428
IS - 19
ER -