Interplay between order and disorder in the high performance of amorphous transparent conducting oxides

Aron Walsh, Juarez L.F. Da Silva, Su Huai Wei

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

We demonstrate, using first-principles calculations, that the exceptional behavior of amorphous transparent conducting oxides formed from In, Zn, Ga, and Al cations arises from the preservation of local crystal order in the cation centered polyhedra, which is maintained due to the strong charge transfer to oxygen. While tails of localized states may be created above the valence band, the highly delocalized conduction band remains unperturbed, offering effective n-type conduction despite the existence of long-range structural disorder. This is in direct contrast to the paradigm set by amorphous covalent semiconductors.

Original languageEnglish
Pages (from-to)5119-5124
Number of pages6
JournalChemistry of Materials
Volume21
Issue number21
DOIs
Publication statusPublished - 2009 Nov 10

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Oxides
Cations
Positive ions
Valence bands
Conduction bands
Charge transfer
Semiconductor materials
Oxygen
Crystals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

@article{58c7ec3e23b942aca2f331e081ff30eb,
title = "Interplay between order and disorder in the high performance of amorphous transparent conducting oxides",
abstract = "We demonstrate, using first-principles calculations, that the exceptional behavior of amorphous transparent conducting oxides formed from In, Zn, Ga, and Al cations arises from the preservation of local crystal order in the cation centered polyhedra, which is maintained due to the strong charge transfer to oxygen. While tails of localized states may be created above the valence band, the highly delocalized conduction band remains unperturbed, offering effective n-type conduction despite the existence of long-range structural disorder. This is in direct contrast to the paradigm set by amorphous covalent semiconductors.",
author = "Aron Walsh and {Da Silva}, {Juarez L.F.} and Wei, {Su Huai}",
year = "2009",
month = "11",
day = "10",
doi = "10.1021/cm9020113",
language = "English",
volume = "21",
pages = "5119--5124",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "21",

}

Interplay between order and disorder in the high performance of amorphous transparent conducting oxides. / Walsh, Aron; Da Silva, Juarez L.F.; Wei, Su Huai.

In: Chemistry of Materials, Vol. 21, No. 21, 10.11.2009, p. 5119-5124.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Interplay between order and disorder in the high performance of amorphous transparent conducting oxides

AU - Walsh, Aron

AU - Da Silva, Juarez L.F.

AU - Wei, Su Huai

PY - 2009/11/10

Y1 - 2009/11/10

N2 - We demonstrate, using first-principles calculations, that the exceptional behavior of amorphous transparent conducting oxides formed from In, Zn, Ga, and Al cations arises from the preservation of local crystal order in the cation centered polyhedra, which is maintained due to the strong charge transfer to oxygen. While tails of localized states may be created above the valence band, the highly delocalized conduction band remains unperturbed, offering effective n-type conduction despite the existence of long-range structural disorder. This is in direct contrast to the paradigm set by amorphous covalent semiconductors.

AB - We demonstrate, using first-principles calculations, that the exceptional behavior of amorphous transparent conducting oxides formed from In, Zn, Ga, and Al cations arises from the preservation of local crystal order in the cation centered polyhedra, which is maintained due to the strong charge transfer to oxygen. While tails of localized states may be created above the valence band, the highly delocalized conduction band remains unperturbed, offering effective n-type conduction despite the existence of long-range structural disorder. This is in direct contrast to the paradigm set by amorphous covalent semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=72449195664&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72449195664&partnerID=8YFLogxK

U2 - 10.1021/cm9020113

DO - 10.1021/cm9020113

M3 - Article

VL - 21

SP - 5119

EP - 5124

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 21

ER -