Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs

D. Q. Kelly, S. Lee, P. Kalra, R. Harris, J. Oh, P. Kirsch, S. K. Banerjee, P. Majhi, H. Tseng, R. Jammy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The influence of substrate heterostructure (Si/ SiGe/ Si) on performance of MOSFETs with high-k/metal gate stacks has been studied. In particular, the effects of the channel thickness on the performance and short channel properties are evaluated. It is found that these heterostructures, when designed optimally, can not only exhibit high mobility but also excellent control of short channel effects down to 70 nm gate length.

Original languageEnglish
Pages (from-to)2054-2057
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
Publication statusPublished - 2007 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs'. Together they form a unique fingerprint.

  • Cite this