Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2

Eunyeong Yang, Jae Eun Seo, Dongwook Seo, Jiwon Chang

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6 Citations (Scopus)


High contact resistance (Rc) limits the ultimate potential of two-dimensional (2-D) materials for future devices. To resolve the Rc problem, forming metallic 1T phase MoS2 locally in the semiconducting 2H phase MoS2 has been successfully demonstrated to use the 1T phase as source/drain electrodes in field effect transistors (FETs). However, the long-term stability of the 1T phase MoS2 still remains as an issue. Recently, an unusual thickness-modulated phase transition from semiconducting to metallic has been experimentally observed in 2-D material PtSe2. Metallic multilayer PtSe2 and semiconducting monolayer PtSe2 can be used as source/drain electrodes and channel, respectively, in FETs. Here, we present a theoretical study on the intrinsic lower limit of Rc in the metallic-semiconducting PtSe2 heterostructure through density functional theory (DFT) combined with non-equilibrium Green's function (NEGF). Compared with Rc in the 1T-2H MoS2 heterostructure, the multilayer-monolayer PtSe2 heterostructure can offer much lower Rc due to the better capability of providing more transmission modes.

Original languageEnglish
Pages (from-to)14636-14641
Number of pages6
Issue number27
Publication statusPublished - 2020 Jul 21

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1C1B5015940 and 2018R1D1A1B0741867).

Publisher Copyright:
© 2020 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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