Intrinsic memory behavior of rough silicon nanowires and enhancement via facile Ag NPs decoration

Ji Hyuk Choi, Jinwoo Sung, Kyeong Ju Moon, Joohee Jeon, Youn Hee Kang, Tae Il Lee, Cheolmin Park, Jae Min Myoung

Research output: Contribution to journalArticle

12 Citations (Scopus)


In inorganic nanowire memory, both physical features rendered during synthesis and integration processes and intrinsic properties of materials are important because they present appropriate schemes for facile fabrication of an excellent memory device. We demonstrate that silicon nanowires (Si NWs) synthesized by an electroless etching (EE) method intrinsically present memory behavior via charge trapping of water molecules due to the rough surface created during synthesis. Additionally, using an electrochemical reaction of silicon with AgNO3 solution, which produces Ag nanoparticles (NPs) with a blocking SiO2 layer, we easily achieve a Ag NP hybrid Si NW memory device.

Original languageEnglish
Pages (from-to)13256-13261
Number of pages6
JournalJournal of Materials Chemistry
Issue number35
Publication statusPublished - 2011 Sep 21


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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