Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Jungwoo Oh, Prashant Majhi

Research output: Contribution to journal › Article

32 Citations (Scopus)

Abstract

Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

Original languageEnglish
Article number032907
JournalApplied Physics Letters
Volume92
Issue number3
DOIs
Publication statusPublished - 2008 Feb 1

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metal oxide semiconductors
germanium
field effect transistors
inversions
passivity
augmentation
transconductance
threshold voltage
modulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Hyoung Sub ; Ok, I. ; Zhang, M. ; Zhu, F. ; Park, S. ; Yum, J. ; Zhao, H. ; Lee, Jack C. ; Oh, Jungwoo ; Majhi, Prashant. / Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer. In: Applied Physics Letters. 2008 ; Vol. 92, No. 3.
@article{290b2597405a4774be3f576a93a24cee,
title = "Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer",
abstract = "Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.",
author = "Kim, {Hyoung Sub} and I. Ok and M. Zhang and F. Zhu and S. Park and J. Yum and H. Zhao and Lee, {Jack C.} and Jungwoo Oh and Prashant Majhi",
year = "2008",
month = "2",
day = "1",
doi = "10.1063/1.2838294",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

Kim, HS, Ok, I, Zhang, M, Zhu, F, Park, S, Yum, J, Zhao, H, Lee, JC, Oh, J & Majhi, P 2008, 'Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer', Applied Physics Letters, vol. 92, no. 3, 032907. https://doi.org/10.1063/1.2838294

Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer. / Kim, Hyoung Sub; Ok, I.; Zhang, M.; Zhu, F.; Park, S.; Yum, J.; Zhao, H.; Lee, Jack C.; Oh, Jungwoo; Majhi, Prashant.

In: Applied Physics Letters, Vol. 92, No. 3, 032907, 01.02.2008.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

AU - Kim, Hyoung Sub

AU - Ok, I.

AU - Zhang, M.

AU - Zhu, F.

AU - Park, S.

AU - Yum, J.

AU - Zhao, H.

AU - Lee, Jack C.

AU - Oh, Jungwoo

AU - Majhi, Prashant

PY - 2008/2/1

Y1 - 2008/2/1

N2 - Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

AB - Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

UR - http://www.scopus.com/inward/record.url?scp=38549171799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38549171799&partnerID=8YFLogxK

U2 - 10.1063/1.2838294

DO - 10.1063/1.2838294

M3 - Article

AN - SCOPUS:38549171799

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 032907

ER -

Kim HS, Ok I, Zhang M, Zhu F, Park S, Yum J et al. Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer. Applied Physics Letters. 2008 Feb 1;92(3). 032907. https://doi.org/10.1063/1.2838294

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