Abstract
Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.
| Original language | English |
|---|---|
| Article number | 032907 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2008 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Kim, H. S., Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, J. C., Oh, J., & Majhi, P. (2008). Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer. Applied Physics Letters, 92(3), [032907]. https://doi.org/10.1063/1.2838294