Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)