Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Jungwoo Oh, Prashant Majhi

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

Original languageEnglish
Article number032907
JournalApplied Physics Letters
Volume92
Issue number3
DOIs
Publication statusPublished - 2008 Feb 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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