Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Jungwoo Oh, Prashant Majhi

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

Original languageEnglish
Article number032907
JournalApplied Physics Letters
Volume92
Issue number3
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was partially supported by Intel Corporation. This work was performed in part at the Microelectronics Research Center at The University of Texas at Austin of National Nanofabrication Infrastructure Network supported by National Science Foundation under Award No. 0335765.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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