Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung Sub Kim; I. Ok; M. Zhang; F. Zhu; S. Park; J. Yum; H. Zhao; Jack C. Lee; Jungwoo Oh; Prashant Majhi

doi:10.1063/1.2838294

Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Hyoung Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Jungwoo Oh, Prashant Majhi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

Original language	English
Article number	032907
Journal	Applied Physics Letters
Volume	92
Issue number	3
DOIs	https://doi.org/10.1063/1.2838294
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was partially supported by Intel Corporation. This work was performed in part at the Microelectronics Research Center at The University of Texas at Austin of National Nanofabrication Infrastructure Network supported by National Science Foundation under Award No. 0335765.

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Physics and Astronomy (miscellaneous)

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title = "Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer",

abstract = "Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.",

author = "Kim, {Hyoung Sub} and I. Ok and M. Zhang and F. Zhu and S. Park and J. Yum and H. Zhao and Lee, {Jack C.} and Jungwoo Oh and Prashant Majhi",

note = "Funding Information: This work was partially supported by Intel Corporation. This work was performed in part at the Microelectronics Research Center at The University of Texas at Austin of National Nanofabrication Infrastructure Network supported by National Science Foundation under Award No. 0335765.",

year = "2008",

doi = "10.1063/1.2838294",

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AU - Kim, Hyoung Sub

AU - Ok, I.

AU - Zhang, M.

AU - Zhu, F.

AU - Park, S.

AU - Yum, J.

AU - Zhao, H.

AU - Lee, Jack C.

AU - Oh, Jungwoo

AU - Majhi, Prashant

N1 - Funding Information: This work was partially supported by Intel Corporation. This work was performed in part at the Microelectronics Research Center at The University of Texas at Austin of National Nanofabrication Infrastructure Network supported by National Science Foundation under Award No. 0335765.

PY - 2008

Y1 - 2008

N2 - Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

AB - Using a thin germanium (Ge) interfacial passivation layer (IPL), GaAs Hf O2 -based inversion-type enhancement-mode metal-oxide-semiconductor field effect transistors (MOSFETs) are realized. The n -channel MOSFETs on semi-insulating GaAs substrate clearly show surface modulation and excellent current control by gate bias. The threshold voltage of ∼0.5 V, the transconductance of ∼0.25 mSmm, the subthreshold swing of ∼130 mV /decade, and the drain current of ∼162 μAmm (normalized to the gate length of 1 μm) at Vd =2 V and Vg = Vth +2 V are obtained. In comparison with previous reports, the dc characteristics of the inversion-type GaAs MOSFETs with a Ge IPL and Hf O2 dielectric demonstrate much similar results.

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Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

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Bibliographical note

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