Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Woong Hee Jeong, Gun Hee Kim, Hyun Soo Shin, Byung Du Ahn, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

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Abstract

The effects of adding Hf into a InZnO (IZO) system, particularly the electrical characteristics of their thin film and thin film transistors (TFTs), were investigated as a function of atomic concentration from 0 to 10 at. % of Hf and Ga/Zn. Because Hf has a high affinity for oxygen in IZO system, the Hf suppresses carrier generation more effectively than does Ga. At 10 at. % of Hf/Zn atomic concentration, the HfInZnO TFTs showed wider on-to-off ratios than those of GaInZnO TFTs due to the low standard-electrode-potential of Hf and sharp subthreshold swings due to low trap density.

Original languageEnglish
Article number093503
JournalApplied Physics Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Jeong, W. H., Kim, G. H., Shin, H. S., Du Ahn, B., Kim, H. J., Ryu, M. K., Park, K. B., Seon, J. B., & Lee, S. Y. (2010). Investigating addition effect of hafnium in InZnO thin film transistors using a solution process. Applied Physics Letters, 96(9), [093503]. https://doi.org/10.1063/1.3340943