Investigating and understanding the initial growth mechanisms of catalyst-free growth of 1D SiC nanostructures

Yoo Youl Choi, Doo Jin Choi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The vapor-solid mechanism of 1D SiC nanostructure growth is examined. The chemical vapor deposition parameters were controlled to estimate their effects on SiC nanowhisker (NW) growth and cross-sectional microimages of the NWs were examined to identify the key factors which induce the initial NW growth. According to our careful investigation, we propose that noncatalytic NW growth is a kinetic driven process that occurs when a high density of small critically sized islands exist, which corresponds to the case of a low deposition rate and high surface diffusion.

Original languageEnglish
Pages (from-to)6963-6970
Number of pages8
JournalCrystEngComm
Volume15
Issue number35
DOIs
Publication statusPublished - 2013 Sep 21

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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