The vapor-solid mechanism of 1D SiC nanostructure growth is examined. The chemical vapor deposition parameters were controlled to estimate their effects on SiC nanowhisker (NW) growth and cross-sectional microimages of the NWs were examined to identify the key factors which induce the initial NW growth. According to our careful investigation, we propose that noncatalytic NW growth is a kinetic driven process that occurs when a high density of small critically sized islands exist, which corresponds to the case of a low deposition rate and high surface diffusion.
|Number of pages||8|
|Publication status||Published - 2013 Sept 21|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics