Investigating and understanding the initial growth mechanisms of catalyst-free growth of 1D SiC nanostructures

Yoo Youl Choi, Doo Jin Choi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The vapor-solid mechanism of 1D SiC nanostructure growth is examined. The chemical vapor deposition parameters were controlled to estimate their effects on SiC nanowhisker (NW) growth and cross-sectional microimages of the NWs were examined to identify the key factors which induce the initial NW growth. According to our careful investigation, we propose that noncatalytic NW growth is a kinetic driven process that occurs when a high density of small critically sized islands exist, which corresponds to the case of a low deposition rate and high surface diffusion.

Original languageEnglish
Pages (from-to)6963-6970
Number of pages8
JournalCrystEngComm
Volume15
Issue number35
DOIs
Publication statusPublished - 2013 Sep 21

Fingerprint

Nanowhiskers
Nanostructures
catalysts
Catalysts
nanostructure growth
surface diffusion
Surface diffusion
Deposition rates
vapor deposition
vapors
Chemical vapor deposition
Vapors
kinetics
estimates
Kinetics

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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Investigating and understanding the initial growth mechanisms of catalyst-free growth of 1D SiC nanostructures. / Choi, Yoo Youl; Choi, Doo Jin.

In: CrystEngComm, Vol. 15, No. 35, 21.09.2013, p. 6963-6970.

Research output: Contribution to journalArticle

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