Investigation into the influence of interfacial changes on the resistive switching of Pr_0.7Ca_0.3MnO₃

Due to the complex nature of interfacial phenomena, various mechanisms have been proposed to explain observed resistive switching (RS) characteristics, even when only one material is present. In this study, the RS behavior of Pr_0.7Ca_0.3MnO₃ (PCMO) with either Al or Hg liquid drop top electrodes (TEs) was investigated. A spectromicroscopy study was performed so as to understand the underlying mechanisms and interfacial changes associated with the RS process. A locally and chemically broken high resistance state region at the Hg TE/PCMO interface indicated the presence of an inhomogeneous interface. Furthermore, RS behavior was observed when using an Hg TE without a change in the Schottky-like barrier height and depletion width in the metal-semiconductor contact. From the results obtained with the two electrode types, it was concluded that different RS behaviors and mechanisms could occur depending on whether the interfacial change was homogeneous or inhomogeneous.