Abstract
Due to the complex nature of interfacial phenomena, various mechanisms have been proposed to explain observed resistive switching (RS) characteristics, even when only one material is present. In this study, the RS behavior of Pr0.7Ca0.3MnO3 (PCMO) with either Al or Hg liquid drop top electrodes (TEs) was investigated. A spectromicroscopy study was performed so as to understand the underlying mechanisms and interfacial changes associated with the RS process. A locally and chemically broken high resistance state region at the Hg TE/PCMO interface indicated the presence of an inhomogeneous interface. Furthermore, RS behavior was observed when using an Hg TE without a change in the Schottky-like barrier height and depletion width in the metal-semiconductor contact. From the results obtained with the two electrode types, it was concluded that different RS behaviors and mechanisms could occur depending on whether the interfacial change was homogeneous or inhomogeneous.
| Original language | English |
|---|---|
| Article number | 465309 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 48 |
| Issue number | 46 |
| DOIs | |
| Publication status | Published - 2015 Oct 22 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Investigation into the influence of interfacial changes on the resistive switching of Pr0.7Ca0.3MnO3 . / Lee, Hong Sub; Yeom, Geun Young; Park, Hyung Ho.
In: Journal of Physics D: Applied Physics, Vol. 48, No. 46, 465309, 22.10.2015.Research output: Contribution to journal › Article
TY - JOUR
T1 - Investigation into the influence of interfacial changes on the resistive switching of Pr0.7Ca0.3MnO3
AU - Lee, Hong Sub
AU - Yeom, Geun Young
AU - Park, Hyung Ho
PY - 2015/10/22
Y1 - 2015/10/22
N2 - Due to the complex nature of interfacial phenomena, various mechanisms have been proposed to explain observed resistive switching (RS) characteristics, even when only one material is present. In this study, the RS behavior of Pr0.7Ca0.3MnO3 (PCMO) with either Al or Hg liquid drop top electrodes (TEs) was investigated. A spectromicroscopy study was performed so as to understand the underlying mechanisms and interfacial changes associated with the RS process. A locally and chemically broken high resistance state region at the Hg TE/PCMO interface indicated the presence of an inhomogeneous interface. Furthermore, RS behavior was observed when using an Hg TE without a change in the Schottky-like barrier height and depletion width in the metal-semiconductor contact. From the results obtained with the two electrode types, it was concluded that different RS behaviors and mechanisms could occur depending on whether the interfacial change was homogeneous or inhomogeneous.
AB - Due to the complex nature of interfacial phenomena, various mechanisms have been proposed to explain observed resistive switching (RS) characteristics, even when only one material is present. In this study, the RS behavior of Pr0.7Ca0.3MnO3 (PCMO) with either Al or Hg liquid drop top electrodes (TEs) was investigated. A spectromicroscopy study was performed so as to understand the underlying mechanisms and interfacial changes associated with the RS process. A locally and chemically broken high resistance state region at the Hg TE/PCMO interface indicated the presence of an inhomogeneous interface. Furthermore, RS behavior was observed when using an Hg TE without a change in the Schottky-like barrier height and depletion width in the metal-semiconductor contact. From the results obtained with the two electrode types, it was concluded that different RS behaviors and mechanisms could occur depending on whether the interfacial change was homogeneous or inhomogeneous.
UR - http://www.scopus.com/inward/record.url?scp=84947081058&partnerID=8YFLogxK
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U2 - 10.1088/0022-3727/48/46/465309
DO - 10.1088/0022-3727/48/46/465309
M3 - Article
AN - SCOPUS:84947081058
VL - 48
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 46
M1 - 465309
ER -