Investigation into the influence of interfacial changes on the resistive switching of Pr0.7Ca0.3MnO3

Hong Sub Lee, Geun Young Yeom, Hyung-Ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Due to the complex nature of interfacial phenomena, various mechanisms have been proposed to explain observed resistive switching (RS) characteristics, even when only one material is present. In this study, the RS behavior of Pr0.7Ca0.3MnO3 (PCMO) with either Al or Hg liquid drop top electrodes (TEs) was investigated. A spectromicroscopy study was performed so as to understand the underlying mechanisms and interfacial changes associated with the RS process. A locally and chemically broken high resistance state region at the Hg TE/PCMO interface indicated the presence of an inhomogeneous interface. Furthermore, RS behavior was observed when using an Hg TE without a change in the Schottky-like barrier height and depletion width in the metal-semiconductor contact. From the results obtained with the two electrode types, it was concluded that different RS behaviors and mechanisms could occur depending on whether the interfacial change was homogeneous or inhomogeneous.

Original languageEnglish
Article number465309
JournalJournal of Physics D: Applied Physics
Volume48
Issue number46
DOIs
Publication statusPublished - 2015 Oct 22

Fingerprint

Electrodes
electrodes
high resistance
depletion
Metals
Semiconductor materials
Liquids
metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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abstract = "Due to the complex nature of interfacial phenomena, various mechanisms have been proposed to explain observed resistive switching (RS) characteristics, even when only one material is present. In this study, the RS behavior of Pr0.7Ca0.3MnO3 (PCMO) with either Al or Hg liquid drop top electrodes (TEs) was investigated. A spectromicroscopy study was performed so as to understand the underlying mechanisms and interfacial changes associated with the RS process. A locally and chemically broken high resistance state region at the Hg TE/PCMO interface indicated the presence of an inhomogeneous interface. Furthermore, RS behavior was observed when using an Hg TE without a change in the Schottky-like barrier height and depletion width in the metal-semiconductor contact. From the results obtained with the two electrode types, it was concluded that different RS behaviors and mechanisms could occur depending on whether the interfacial change was homogeneous or inhomogeneous.",
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Investigation into the influence of interfacial changes on the resistive switching of Pr0.7Ca0.3MnO3 . / Lee, Hong Sub; Yeom, Geun Young; Park, Hyung-Ho.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 46, 465309, 22.10.2015.

Research output: Contribution to journalArticle

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