Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation

Young Wook Lee, Sung Hwan Choi, Jeong Soo Lee, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages247-252
Number of pages6
DOIs
Publication statusPublished - 2012 Jan 1
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2011 Apr 252011 Apr 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1321
ISSN (Print)0272-9172

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period11/4/2511/4/29

Fingerprint

Passivation
passivity
Oxygen vacancies
Oxides
shift
low concentrations
conductors
oxides
oxygen

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Y. W., Choi, S. H., Lee, J. S., Kwon, J. Y., & Han, M. K. (2012). Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 (pp. 247-252). (Materials Research Society Symposium Proceedings; Vol. 1321). https://doi.org/10.1557/opl.2011.1091
Lee, Young Wook ; Choi, Sung Hwan ; Lee, Jeong Soo ; Kwon, Jang Yeon ; Han, Min Koo. / Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. 2012. pp. 247-252 (Materials Research Society Symposium Proceedings).
@inproceedings{66373235d565491fb25b2bec8ab319a2,
title = "Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation",
abstract = "We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.",
author = "Lee, {Young Wook} and Choi, {Sung Hwan} and Lee, {Jeong Soo} and Kwon, {Jang Yeon} and Han, {Min Koo}",
year = "2012",
month = "1",
day = "1",
doi = "10.1557/opl.2011.1091",
language = "English",
isbn = "9781605112985",
series = "Materials Research Society Symposium Proceedings",
pages = "247--252",
booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011",

}

Lee, YW, Choi, SH, Lee, JS, Kwon, JY & Han, MK 2012, Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. Materials Research Society Symposium Proceedings, vol. 1321, pp. 247-252, 2011 MRS Spring Meeting, San Francisco, CA, United States, 11/4/25. https://doi.org/10.1557/opl.2011.1091

Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. / Lee, Young Wook; Choi, Sung Hwan; Lee, Jeong Soo; Kwon, Jang Yeon; Han, Min Koo.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. 2012. p. 247-252 (Materials Research Society Symposium Proceedings; Vol. 1321).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation

AU - Lee, Young Wook

AU - Choi, Sung Hwan

AU - Lee, Jeong Soo

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

AB - We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

UR - http://www.scopus.com/inward/record.url?scp=84455212246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84455212246&partnerID=8YFLogxK

U2 - 10.1557/opl.2011.1091

DO - 10.1557/opl.2011.1091

M3 - Conference contribution

AN - SCOPUS:84455212246

SN - 9781605112985

T3 - Materials Research Society Symposium Proceedings

SP - 247

EP - 252

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011

ER -

Lee YW, Choi SH, Lee JS, Kwon JY, Han MK. Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. 2012. p. 247-252. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/opl.2011.1091