TY - GEN
T1 - Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation
AU - Lee, Young Wook
AU - Choi, Sung Hwan
AU - Lee, Jeong Soo
AU - Kwon, Jang Yeon
AU - Han, Min Koo
PY - 2012
Y1 - 2012
N2 - We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.
AB - We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.
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U2 - 10.1557/opl.2011.1091
DO - 10.1557/opl.2011.1091
M3 - Conference contribution
AN - SCOPUS:84455212246
SN - 9781605112985
T3 - Materials Research Society Symposium Proceedings
SP - 247
EP - 252
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -