Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation

Young Wook Lee; Sung Hwan Choi; Jeong Soo Lee; Jang Yeon Kwon; Min Koo Han

doi:10.1557/opl.2011.1091

Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation

Young Wook Lee, Sung Hwan Choi, Jeong Soo Lee, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO ₂ for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages	247-252
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.1091
Publication status	Published - 2012
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 2011 Apr 25 → 2011 Apr 29

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1321
ISSN (Print)	0272-9172

Other

Other	2011 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	11/4/25 → 11/4/29

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2011.1091

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title = "Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation",

abstract = "We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.",

author = "Lee, {Young Wook} and Choi, {Sung Hwan} and Lee, {Jeong Soo} and Kwon, {Jang Yeon} and Han, {Min Koo}",

year = "2012",

doi = "10.1557/opl.2011.1091",

language = "English",

isbn = "9781605112985",

series = "Materials Research Society Symposium Proceedings",

pages = "247--252",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011",

}

Lee, YW, Choi, SH, Lee, JS, Kwon, JY & Han, MK 2012, Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. Materials Research Society Symposium Proceedings, vol. 1321, pp. 247-252, 2011 MRS Spring Meeting, San Francisco, CA, United States, 11/4/25. https://doi.org/10.1557/opl.2011.1091

Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. / Lee, Young Wook; Choi, Sung Hwan; Lee, Jeong Soo; Kwon, Jang Yeon; Han, Min Koo.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. 2012. p. 247-252 (Materials Research Society Symposium Proceedings; Vol. 1321).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

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