Abstract
We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.
| Original language | English |
|---|---|
| Title of host publication | Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 |
| Pages | 247-252 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - 2012 Jan 1 |
| Event | 2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 2011 Apr 25 → 2011 Apr 29 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1321 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2011 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 11/4/25 → 11/4/29 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Lee, Y. W., Choi, S. H., Lee, J. S., Kwon, J. Y., & Han, M. K. (2012). Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 (pp. 247-252). (Materials Research Society Symposium Proceedings; Vol. 1321). https://doi.org/10.1557/opl.2011.1091