Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation

Young Wook Lee, Sung Hwan Choi, Jeong Soo Lee, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We successfully fabricated a-IGZO TFTs employing a Ti/Cu source/drain (S/D) and SiNx passivation in order to reduce the line-resistance, as compared to most oxide TFTs that use Mo (or TCO) and SiO 2 for their S/D and passivation, respectively. Although passivated with SiNx, the TFT exhibits good transfer characteristics without a negative shift. However, the TFT employing a Mo S/D exhibited conductor-like characteristics when passivated with SiNx. Our investigation suggests that the IGZO oxygen vacancies found in the Ti/Cu S/D are controlled, resulting in low concentrations, and so prevent the SiNx-passivated TFT from having a negative shift.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages247-252
Number of pages6
DOIs
Publication statusPublished - 2012 Jan 1
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2011 Apr 252011 Apr 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1321
ISSN (Print)0272-9172

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period11/4/2511/4/29

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Lee, Y. W., Choi, S. H., Lee, J. S., Kwon, J. Y., & Han, M. K. (2012). Investigation of amorphous IGZO TFT employing Ti/Cu source/drain and SiNx passivation. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 (pp. 247-252). (Materials Research Society Symposium Proceedings; Vol. 1321). https://doi.org/10.1557/opl.2011.1091