Investigation of atomic layer deposition of magnesium oxide on a CoFeB layer for three-dimensional magnetic tunneling junctions

Jeong Gyu Song, Jusang Park, Jaehong Yoon, Keewon Kim, Youngman Jang, Kwangseok Kim, Hyungjun Kim

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5 Citations (Scopus)


In this study, we comparatively investigated thermal- and plasma-enhanced atomic layer deposition (Th- and PE-ALD) of MgO on a CoFeB layer. MgCp 2 (Bis(cyclopentadienyl)magnesium) was used as a Mg precursor and H2O and O2 plasma were employed as reactants for the Th- and PE-ALD process, respectively. Th- and PE-ALD MgO formed interlayer between MgO and CoFeB layer due to the oxidation of CoFeB by H2O and O 2 plasma during the Th- and PE-ALD process. While interlayer formation was observed to be less than 1 nm for Th-ALD MgO, the PE-ALD MgO process resulted in an approximately 5 nm thick, predominantly FeOx oxidation of CoFeB. This was due to the high reactivity of the O radicals and the higher driving force of Fe for oxidation when compared with Co. Our results show that the Th-ALD MgO process has a better potential as a deposition technique to form tunnel barrier of magnetic tunneling junctions (MTJs).

Original languageEnglish
Pages (from-to)716-719
Number of pages4
JournalJournal of Alloys and Compounds
Publication statusPublished - 2014 Mar 5


All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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