Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy

M. H. Cho, Y. J. Cho, M. K. Lee, S. A. Park, Y. S. Roh, Y. K. Kim, K. Jeong, S. K. Kang, D. H. Ko, H. J. Shin, K. W. Kwon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Scanning photoelectron spectroscopy was used to investigate the effect of annealing on SiGe films. It was observed that films that were annealed at a temperature above 950°C in N2 ambient showed a drastic morphological change. The Si and Ge contents were found to influence the difference in the chemical state between an island like surface and a flat surface. The lower heat of formation of GeO2 compared to SiO 2 led to the suppression in the oxidation of Ge during the annealing process.

Original languageEnglish
Pages (from-to)1012-1016
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
Publication statusPublished - 2004 May 1

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Photoelectrons
Microscopic examination
photoelectrons
Annealing
microscopy
Scanning
annealing
scanning
heat of formation
Photoelectron spectroscopy
profiles
flat surfaces
retarding
photoelectron spectroscopy
Oxidation
oxidation
Temperature
temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Cho, M. H. ; Cho, Y. J. ; Lee, M. K. ; Park, S. A. ; Roh, Y. S. ; Kim, Y. K. ; Jeong, K. ; Kang, S. K. ; Ko, D. H. ; Shin, H. J. ; Kwon, K. W. / Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 ; Vol. 22, No. 3. pp. 1012-1016.
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abstract = "Scanning photoelectron spectroscopy was used to investigate the effect of annealing on SiGe films. It was observed that films that were annealed at a temperature above 950°C in N2 ambient showed a drastic morphological change. The Si and Ge contents were found to influence the difference in the chemical state between an island like surface and a flat surface. The lower heat of formation of GeO2 compared to SiO 2 led to the suppression in the oxidation of Ge during the annealing process.",
author = "Cho, {M. H.} and Cho, {Y. J.} and Lee, {M. K.} and Park, {S. A.} and Roh, {Y. S.} and Kim, {Y. K.} and K. Jeong and Kang, {S. K.} and Ko, {D. H.} and Shin, {H. J.} and Kwon, {K. W.}",
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Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy. / Cho, M. H.; Cho, Y. J.; Lee, M. K.; Park, S. A.; Roh, Y. S.; Kim, Y. K.; Jeong, K.; Kang, S. K.; Ko, D. H.; Shin, H. J.; Kwon, K. W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 01.05.2004, p. 1012-1016.

Research output: Contribution to journalArticle

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T1 - Investigation of Ge profile on SiGe islands by scanning photoelectron microscopy

AU - Cho, M. H.

AU - Cho, Y. J.

AU - Lee, M. K.

AU - Park, S. A.

AU - Roh, Y. S.

AU - Kim, Y. K.

AU - Jeong, K.

AU - Kang, S. K.

AU - Ko, D. H.

AU - Shin, H. J.

AU - Kwon, K. W.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - Scanning photoelectron spectroscopy was used to investigate the effect of annealing on SiGe films. It was observed that films that were annealed at a temperature above 950°C in N2 ambient showed a drastic morphological change. The Si and Ge contents were found to influence the difference in the chemical state between an island like surface and a flat surface. The lower heat of formation of GeO2 compared to SiO 2 led to the suppression in the oxidation of Ge during the annealing process.

AB - Scanning photoelectron spectroscopy was used to investigate the effect of annealing on SiGe films. It was observed that films that were annealed at a temperature above 950°C in N2 ambient showed a drastic morphological change. The Si and Ge contents were found to influence the difference in the chemical state between an island like surface and a flat surface. The lower heat of formation of GeO2 compared to SiO 2 led to the suppression in the oxidation of Ge during the annealing process.

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