Scanning photoelectron spectroscopy was used to investigate the effect of annealing on SiGe films. It was observed that films that were annealed at a temperature above 950°C in N2 ambient showed a drastic morphological change. The Si and Ge contents were found to influence the difference in the chemical state between an island like surface and a flat surface. The lower heat of formation of GeO2 compared to SiO 2 led to the suppression in the oxidation of Ge during the annealing process.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 May 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering