Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors: A cation combinatorial approach

Jang Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jin Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sangyun Lee

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We explored the multicomponent oxide semiconductor of Hf-In-Zn-O (HIZO) using vacuum deposition technique and carried out the in-depth study on the light-induced instability of HIZO transistor under the bias thermal stress. A higher level of Hf or Zn incorporation in HIZO materials was found to be critical for improving the photostability of HIZO transistors under negative bias thermal stress conditions, which can be explained by either band-gap modulation of the HIZO film or changes in the oxygen vacancy concentration in the HIZO channel. This result is consistent with the trapping or injection model of photocreated hole carriers.

Original languageEnglish
Pages (from-to)H433-H437
JournalJournal of the Electrochemical Society
Volume158
Issue number4
DOIs
Publication statusPublished - 2011 Apr 29

Fingerprint

Thin film transistors
thermal stresses
Thermal stress
Cations
Transistors
transistors
Positive ions
cations
Vacuum deposition
vacuum deposition
Oxygen vacancies
thin films
Energy gap
trapping
Modulation
injection
modulation
oxides
oxygen
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kwon, Jang Yeon ; Jung, Ji Sim ; Son, Kyoung Seok ; Lee, Kwang Hee ; Park, Joon Seok ; Kim, Tae Sang ; Park, Jin Seong ; Choi, Rino ; Jeong, Jae Kyeong ; Koo, Bonwon ; Lee, Sangyun. / Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors : A cation combinatorial approach. In: Journal of the Electrochemical Society. 2011 ; Vol. 158, No. 4. pp. H433-H437.
@article{3a74762b42344583ba97195ceaa394ba,
title = "Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors: A cation combinatorial approach",
abstract = "We explored the multicomponent oxide semiconductor of Hf-In-Zn-O (HIZO) using vacuum deposition technique and carried out the in-depth study on the light-induced instability of HIZO transistor under the bias thermal stress. A higher level of Hf or Zn incorporation in HIZO materials was found to be critical for improving the photostability of HIZO transistors under negative bias thermal stress conditions, which can be explained by either band-gap modulation of the HIZO film or changes in the oxygen vacancy concentration in the HIZO channel. This result is consistent with the trapping or injection model of photocreated hole carriers.",
author = "Kwon, {Jang Yeon} and Jung, {Ji Sim} and Son, {Kyoung Seok} and Lee, {Kwang Hee} and Park, {Joon Seok} and Kim, {Tae Sang} and Park, {Jin Seong} and Rino Choi and Jeong, {Jae Kyeong} and Bonwon Koo and Sangyun Lee",
year = "2011",
month = "4",
day = "29",
doi = "10.1149/1.3552700",
language = "English",
volume = "158",
pages = "H433--H437",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "4",

}

Kwon, JY, Jung, JS, Son, KS, Lee, KH, Park, JS, Kim, TS, Park, JS, Choi, R, Jeong, JK, Koo, B & Lee, S 2011, 'Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors: A cation combinatorial approach', Journal of the Electrochemical Society, vol. 158, no. 4, pp. H433-H437. https://doi.org/10.1149/1.3552700

Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors : A cation combinatorial approach. / Kwon, Jang Yeon; Jung, Ji Sim; Son, Kyoung Seok; Lee, Kwang Hee; Park, Joon Seok; Kim, Tae Sang; Park, Jin Seong; Choi, Rino; Jeong, Jae Kyeong; Koo, Bonwon; Lee, Sangyun.

In: Journal of the Electrochemical Society, Vol. 158, No. 4, 29.04.2011, p. H433-H437.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors

T2 - A cation combinatorial approach

AU - Kwon, Jang Yeon

AU - Jung, Ji Sim

AU - Son, Kyoung Seok

AU - Lee, Kwang Hee

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Park, Jin Seong

AU - Choi, Rino

AU - Jeong, Jae Kyeong

AU - Koo, Bonwon

AU - Lee, Sangyun

PY - 2011/4/29

Y1 - 2011/4/29

N2 - We explored the multicomponent oxide semiconductor of Hf-In-Zn-O (HIZO) using vacuum deposition technique and carried out the in-depth study on the light-induced instability of HIZO transistor under the bias thermal stress. A higher level of Hf or Zn incorporation in HIZO materials was found to be critical for improving the photostability of HIZO transistors under negative bias thermal stress conditions, which can be explained by either band-gap modulation of the HIZO film or changes in the oxygen vacancy concentration in the HIZO channel. This result is consistent with the trapping or injection model of photocreated hole carriers.

AB - We explored the multicomponent oxide semiconductor of Hf-In-Zn-O (HIZO) using vacuum deposition technique and carried out the in-depth study on the light-induced instability of HIZO transistor under the bias thermal stress. A higher level of Hf or Zn incorporation in HIZO materials was found to be critical for improving the photostability of HIZO transistors under negative bias thermal stress conditions, which can be explained by either band-gap modulation of the HIZO film or changes in the oxygen vacancy concentration in the HIZO channel. This result is consistent with the trapping or injection model of photocreated hole carriers.

UR - http://www.scopus.com/inward/record.url?scp=79955151187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955151187&partnerID=8YFLogxK

U2 - 10.1149/1.3552700

DO - 10.1149/1.3552700

M3 - Article

AN - SCOPUS:79955151187

VL - 158

SP - H433-H437

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 4

ER -