Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors: A cation combinatorial approach

Jang Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang Hee Lee, Joon Seok Park, Tae Sang Kim, Jin Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sangyun Lee

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

We explored the multicomponent oxide semiconductor of Hf-In-Zn-O (HIZO) using vacuum deposition technique and carried out the in-depth study on the light-induced instability of HIZO transistor under the bias thermal stress. A higher level of Hf or Zn incorporation in HIZO materials was found to be critical for improving the photostability of HIZO transistors under negative bias thermal stress conditions, which can be explained by either band-gap modulation of the HIZO film or changes in the oxygen vacancy concentration in the HIZO channel. This result is consistent with the trapping or injection model of photocreated hole carriers.

Original languageEnglish
Pages (from-to)H433-H437
JournalJournal of the Electrochemical Society
Volume158
Issue number4
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistors: A cation combinatorial approach'. Together they form a unique fingerprint.

Cite this