Investigation of link formation in a novel planar-type antifuse structure

Jong Tae Baek, Hyung-Ho Park, Sang Won Kang, Byung Tae Ahn, Ilyung Joun Yoo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.

Original languageEnglish
Pages (from-to)41-44
Number of pages4
JournalThin Solid Films
Volume288
Issue number1-2
DOIs
Publication statusPublished - 1996 Nov 15

Fingerprint

Polysilicon
programming
Aluminum
aluminum
Boron
mass transfer
boron
electric potential
Electric potential
Mass transfer
electrodes
Electrodes
breakdown
microscopy
Microscopic examination
scanning
propagation
Scanning
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Baek, Jong Tae ; Park, Hyung-Ho ; Kang, Sang Won ; Ahn, Byung Tae ; Yoo, Ilyung Joun. / Investigation of link formation in a novel planar-type antifuse structure. In: Thin Solid Films. 1996 ; Vol. 288, No. 1-2. pp. 41-44.
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Investigation of link formation in a novel planar-type antifuse structure. / Baek, Jong Tae; Park, Hyung-Ho; Kang, Sang Won; Ahn, Byung Tae; Yoo, Ilyung Joun.

In: Thin Solid Films, Vol. 288, No. 1-2, 15.11.1996, p. 41-44.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of link formation in a novel planar-type antifuse structure

AU - Baek, Jong Tae

AU - Park, Hyung-Ho

AU - Kang, Sang Won

AU - Ahn, Byung Tae

AU - Yoo, Ilyung Joun

PY - 1996/11/15

Y1 - 1996/11/15

N2 - A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.

AB - A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Ω, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Auger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 μm in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.

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