The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm SnO2 film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼104) which was reduced from ∼106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H2O and O2 into the devices by the IBAD SnO2 thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.
|Number of pages||4|
|Journal||Proceedings of International Meeting on Information Display|
|Publication status||Published - 2006 Dec 1|
|Event||5th International Meeting on Information Display - Seoul, Korea, Republic of|
Duration: 2005 Jul 19 → 2005 Jul 23
All Science Journal Classification (ASJC) codes