Investigation of long-term stability of pentaeene thin-film transistors encapsulated with transparent SnO2

Woo Jin Kim, Won Hoe Koo, Sung Jin Jo, Chang Su Kim, Hong Koo Baik

Research output: Contribution to journalConference article

Abstract

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm SnO2 film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼104) which was reduced from ∼106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H2O and O2 into the devices by the IBAD SnO2 thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.

Original languageEnglish
Pages (from-to)1276-1279
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2
Publication statusPublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

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Ion beam assisted deposition
Thin film transistors
Thin films
Buffer layers
Permeation
Aging of materials
Air
Gases

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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title = "Investigation of long-term stability of pentaeene thin-film transistors encapsulated with transparent SnO2",
abstract = "The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm SnO2 film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37{\%} reduction compared to 90{\%} reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼104) which was reduced from ∼106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H2O and O2 into the devices by the IBAD SnO2 thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.",
author = "Kim, {Woo Jin} and Koo, {Won Hoe} and Jo, {Sung Jin} and Kim, {Chang Su} and Baik, {Hong Koo}",
year = "2006",
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Investigation of long-term stability of pentaeene thin-film transistors encapsulated with transparent SnO2. / Kim, Woo Jin; Koo, Won Hoe; Jo, Sung Jin; Kim, Chang Su; Baik, Hong Koo.

In: Proceedings of International Meeting on Information Display, Vol. 2, 01.12.2006, p. 1276-1279.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Investigation of long-term stability of pentaeene thin-film transistors encapsulated with transparent SnO2

AU - Kim, Woo Jin

AU - Koo, Won Hoe

AU - Jo, Sung Jin

AU - Kim, Chang Su

AU - Baik, Hong Koo

PY - 2006/12/1

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N2 - The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm SnO2 film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼104) which was reduced from ∼106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H2O and O2 into the devices by the IBAD SnO2 thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.

AB - The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm SnO2 film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 105 to that of the unprotected devices (∼104) which was reduced from ∼106 before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of H2O and O2 into the devices by the IBAD SnO2 thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.

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