Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers

Bongyong Lee, Hongil Yoon, Kyung Sook Hyun, Yong Hwan Kwon, Ilgu Yun

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Planar InP/InGaAs avalanche photodiodes are widely used for high-speed optical receivers in optical fiber communication systems. Even though these avalanche photodiodes offer the excellent characteristics in high-speed operation, the performance metrics are affected by manufacturing parameter variations considerably. In this paper, the effects of manufacturing variations on the device performance are investigated. In order to build a photodiode model, the test structures were fabricated and the measured current-voltage characteristics were compared with the simulated data to verify the model. After the model verification, the variations of the breakdown voltage and punch-through voltage according to the different manufacturing parameters such as multiplication layer width and charge sheet density are examined. Based on the results, the manufacturability of the avalanche photodiodes can be improved by analyzing the manufacturing variations.

Original languageEnglish
Pages (from-to)635-640
Number of pages6
JournalMicroelectronics Journal
Volume35
Issue number8
DOIs
Publication statusPublished - 2004 Aug 1

Fingerprint

Optical receivers
Avalanche photodiodes
avalanches
photodiodes
manufacturing
receivers
high speed
Optical fiber communication
punches
electric potential
Current voltage characteristics
Photodiodes
Electric breakdown
electrical faults
multiplication
telecommunication
Communication systems
optical fibers
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "Planar InP/InGaAs avalanche photodiodes are widely used for high-speed optical receivers in optical fiber communication systems. Even though these avalanche photodiodes offer the excellent characteristics in high-speed operation, the performance metrics are affected by manufacturing parameter variations considerably. In this paper, the effects of manufacturing variations on the device performance are investigated. In order to build a photodiode model, the test structures were fabricated and the measured current-voltage characteristics were compared with the simulated data to verify the model. After the model verification, the variations of the breakdown voltage and punch-through voltage according to the different manufacturing parameters such as multiplication layer width and charge sheet density are examined. Based on the results, the manufacturability of the avalanche photodiodes can be improved by analyzing the manufacturing variations.",
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Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers. / Lee, Bongyong; Yoon, Hongil; Hyun, Kyung Sook; Kwon, Yong Hwan; Yun, Ilgu.

In: Microelectronics Journal, Vol. 35, No. 8, 01.08.2004, p. 635-640.

Research output: Contribution to journalArticle

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