Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method

Min Jung Lee, Joyti Prakash Kar, Tae Il Lee, Dongwon Lee, Dae Kyu Choi, Joong Hwee Cho, Jae Min Myoung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.

Original languageEnglish
Pages (from-to)1032-1036
Number of pages5
JournalVacuum
Volume85
Issue number11
DOIs
Publication statusPublished - 2011 Apr 15

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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