Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method

Min Jung Lee, Joyti Prakash Kar, Tae Il Lee, Dongwon Lee, Dae Kyu Choi, Joong Hwee Cho, Jae Min Myoung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.

Original languageEnglish
Pages (from-to)1032-1036
Number of pages5
JournalVacuum
Volume85
Issue number11
DOIs
Publication statusPublished - 2011 Apr 15

Fingerprint

Plasma enhanced chemical vapor deposition
optical properties
Flow of gases
gas flow
Infrared absorption
Amorphous films
Deposition rates
Silicon nitride
Refractive index
Photoluminescence
Nitrogen
X ray photoelectron spectroscopy
silicon nitrides
Flow rate
infrared absorption
flow velocity
photoelectron spectroscopy
vapor deposition
refractivity
reflectance

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Lee, Min Jung ; Kar, Joyti Prakash ; Lee, Tae Il ; Lee, Dongwon ; Choi, Dae Kyu ; Cho, Joong Hwee ; Myoung, Jae Min. / Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method. In: Vacuum. 2011 ; Vol. 85, No. 11. pp. 1032-1036.
@article{9c7ebcc4dea3489992be79c915832243,
title = "Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method",
abstract = "Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.",
author = "Lee, {Min Jung} and Kar, {Joyti Prakash} and Lee, {Tae Il} and Dongwon Lee and Choi, {Dae Kyu} and Cho, {Joong Hwee} and Myoung, {Jae Min}",
year = "2011",
month = "4",
day = "15",
doi = "10.1016/j.vacuum.2011.03.012",
language = "English",
volume = "85",
pages = "1032--1036",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "11",

}

Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method. / Lee, Min Jung; Kar, Joyti Prakash; Lee, Tae Il; Lee, Dongwon; Choi, Dae Kyu; Cho, Joong Hwee; Myoung, Jae Min.

In: Vacuum, Vol. 85, No. 11, 15.04.2011, p. 1032-1036.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Investigation of optical and compositional properties of thin SiN x:H films with an enhanced growth rate by high frequency PECVD method

AU - Lee, Min Jung

AU - Kar, Joyti Prakash

AU - Lee, Tae Il

AU - Lee, Dongwon

AU - Choi, Dae Kyu

AU - Cho, Joong Hwee

AU - Myoung, Jae Min

PY - 2011/4/15

Y1 - 2011/4/15

N2 - Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.

AB - Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios [R = NH 3/(SiH4 + NH3)], where the flow rate of NH 3 was varied by keeping the constant flow (150 sccm) of SiH 4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 /s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R.

UR - http://www.scopus.com/inward/record.url?scp=79955804747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955804747&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2011.03.012

DO - 10.1016/j.vacuum.2011.03.012

M3 - Article

AN - SCOPUS:79955804747

VL - 85

SP - 1032

EP - 1036

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 11

ER -