Investigation of oxide layer removal mechanism using reactive gases

Engineering & Materials Science

• Byproducts 100%
• Oxides 82%
• Plasma etching 71%
• Silicon oxides 69%
• Wet etching 66%
• Silicon nitride 58%
• Contact resistance 55%
• Gases 54%
• Contact angle 52%
• Ammonia 51%
• Molecules 46%
• Electron microscopes 45%
• Nitrogen 44%
• Aspect ratio 44%
• Scanning 37%
• Electrodes 36%
• Substrates 33%

Physics & Astronomy

• etching 72%
• pressure chambers 61%
• ellipsometers 61%
• oxides 59%
• high aspect ratio 51%
• silicon oxides 50%
• contact resistance 50%
• gases 49%
• ammonia 48%
• silicon nitrides 46%
• CMOS 43%
• analyzers 42%
• dissociation 39%
• electron microscopes 38%
• nitrogen 35%
• scanning 30%
• electrodes 29%
• molecules 25%

Chemistry

• Etching 86%
• Nitrogen Trifluoride 83%
• Contact Resistance 60%
• Silicon Oxide 59%
• Oxide 51%
• Gas 50%
• Nitride 46%
• Ammonia 36%
• Dissociation 34%
• Plasma 29%
• Pressure 27%
• Electron Particle 26%
• Behavior as Electrode 24%
• Molecule 16%