Investigation of photo-induced hysteresis and off-current in amorphous In-Ga-Zn oxide thin-film transistors under UV light irradiation

Soo Yeon Lee, Jang Yeon Kwon, Min Koo Han

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We investigated the hysteresis and off-current (Ioff) of amorphous In-Ga-Zn oxide thin-film transistors illuminated by 400 nm light at various intensities. Both hysteresis and Ioff are induced by the ionized oxygen vacancy (Vo2+) that forms at the interface between the gate insulator and active layer. In our measurements, Ioff was much less than the estimated photocurrent. Ioff showed a rapid nonlinear increase with light intensity, while the photocurrent of a conventional crystalline semiconductor is expected to show a linear relationship. Furthermore, a numerical analysis suggested that the response time of Vo 2+ should be considered when analyzing the hysteresis of these devices.

Original languageEnglish
Article number6553256
Pages (from-to)2574-2579
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2013 Aug 5


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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