Investigation of photo-induced hysteresis and off-current in amorphous In-Ga-Zn oxide thin-film transistors under UV light irradiation

Soo Yeon Lee, Jang Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We investigated the hysteresis and off-current (Ioff) of amorphous In-Ga-Zn oxide thin-film transistors illuminated by 400 nm light at various intensities. Both hysteresis and Ioff are induced by the ionized oxygen vacancy (Vo2+) that forms at the interface between the gate insulator and active layer. In our measurements, Ioff was much less than the estimated photocurrent. Ioff showed a rapid nonlinear increase with light intensity, while the photocurrent of a conventional crystalline semiconductor is expected to show a linear relationship. Furthermore, a numerical analysis suggested that the response time of Vo 2+ should be considered when analyzing the hysteresis of these devices.

Original languageEnglish
Article number6553256
Pages (from-to)2574-2579
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number8
DOIs
Publication statusPublished - 2013 Aug 5

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Thin film transistors
Ultraviolet radiation
Oxide films
Hysteresis
Irradiation
Photocurrents
Oxygen vacancies
Numerical analysis
Semiconductor materials
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "We investigated the hysteresis and off-current (Ioff) of amorphous In-Ga-Zn oxide thin-film transistors illuminated by 400 nm light at various intensities. Both hysteresis and Ioff are induced by the ionized oxygen vacancy (Vo2+) that forms at the interface between the gate insulator and active layer. In our measurements, Ioff was much less than the estimated photocurrent. Ioff showed a rapid nonlinear increase with light intensity, while the photocurrent of a conventional crystalline semiconductor is expected to show a linear relationship. Furthermore, a numerical analysis suggested that the response time of Vo 2+ should be considered when analyzing the hysteresis of these devices.",
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Investigation of photo-induced hysteresis and off-current in amorphous In-Ga-Zn oxide thin-film transistors under UV light irradiation. / Lee, Soo Yeon; Kwon, Jang Yeon; Han, Min Koo.

In: IEEE Transactions on Electron Devices, Vol. 60, No. 8, 6553256, 05.08.2013, p. 2574-2579.

Research output: Contribution to journalArticle

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