TY - GEN
T1 - Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors
AU - Yoon, Doo Hyun
AU - Lim, Hyun Soo
AU - Kim, Si Joon
AU - Jung, Joohye
AU - Kim, Hyun Jae
PY - 2012
Y1 - 2012
N2 - As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.
AB - As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.
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UR - http://www.scopus.com/inward/citedby.url?scp=84885926809&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84885926809
SN - 9781627486521
T3 - Proceedings of the International Display Workshops
SP - 371
EP - 374
BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
T2 - 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Y2 - 4 December 2012 through 7 December 2012
ER -
