Abstract
As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.
| Original language | English |
|---|---|
| Title of host publication | Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 |
| Pages | 371-374 |
| Number of pages | 4 |
| Publication status | Published - 2012 |
| Event | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 2012 Dec 4 → 2012 Dec 7 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 12/12/4 → 12/12/7 |
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
UN SDGs
This output contributes to the following Sustainable Development Goal(s)
