Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors

Doo Hyun Yoon; Hyun Soo Lim; Si Joon Kim; Joohye Jung; Hyun Jae Kim

Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors

Doo Hyun Yoon, Hyun Soo Lim, Si Joon Kim, Joohye Jung, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.

Original language	English
Title of host publication	Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages	371-374
Number of pages	4
Publication status	Published - 2012
Event	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 2012 Dec 4 → 2012 Dec 7

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Other

Other	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country	Japan
City	Kyoto
Period	12/12/4 → 12/12/7

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

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Cite this

@inproceedings{47acdc96dae748f29f1367ce81784241,

title = "Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors",

abstract = "As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.",

author = "Yoon, {Doo Hyun} and Lim, {Hyun Soo} and Kim, {Si Joon} and Joohye Jung and Kim, {Hyun Jae}",

note = "Copyright: Copyright 2013 Elsevier B.V., All rights reserved.; 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

year = "2012",

language = "English",

isbn = "9781627486521",

series = "Proceedings of the International Display Workshops",

pages = "371--374",

booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

}

Yoon, DH, Lim, HS, Kim, SJ, Jung, J & Kim, HJ 2012, Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors. in Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, vol. 1, pp. 371-374, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 12/12/4.

Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors. / Yoon, Doo Hyun; Lim, Hyun Soo; Kim, Si Joon; Jung, Joohye; Kim, Hyun Jae.

Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 371-374 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Jung, Joohye

AU - Kim, Hyun Jae

PY - 2012

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N2 - As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.

AB - As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.

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