Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors

Doo Hyun Yoon, Hyun Soo Lim, Si Joon Kim, Joohye Jung, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages371-374
Number of pages4
Publication statusPublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period12/12/412/12/7

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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