Investigation of process parameters on the properties of selective epitaxial growth SiGe structure

Sun Wook Kim, J. H. Yoo, Sang Mo Koo, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work presents the effect of process parameters such as substrate condition, flow rate of precursors and dopant on selective epitaxial growth (SEG) of Si1-xGex layer in recessed source and drain (S/D) regions of pMOSFET structure. It was observed that the growth rate of SEG Si1-xGex on patterned wafer was slightly less than that of Si1-xGex on bare wafer as GeH4 flow rate increased. And an in-situ boron-doped SiGe layer exhibits lower growth rate and Ge content than intrinsic SiGe layer due to a decrease of GeH4 partial pressure. Nano beam electron diffraction (NBD), which is an efficient method to measure induced compressive strain in Si channel, is applied on both intrinsic and in-situ boron doped Si1-xGex layers with a different Ge content. NBD patterns confirmed that higher Ge concentration introduces more strain in the channel region and in-situ boron doping of Si 1-xGex does not affect the channel strain.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages171-179
Number of pages9
Edition6
DOIs
Publication statusPublished - 2010 Dec 1
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

Fingerprint

Epitaxial growth
Boron
Electron diffraction
Doping (additives)
Flow rate
Partial pressure
Diffraction patterns
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, S. W., Yoo, J. H., Koo, S. M., & Ko, D. H. (2010). Investigation of process parameters on the properties of selective epitaxial growth SiGe structure. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices (6 ed., pp. 171-179). (ECS Transactions; Vol. 33, No. 6). https://doi.org/10.1149/1.3487546
Kim, Sun Wook ; Yoo, J. H. ; Koo, Sang Mo ; Ko, Dae Hong. / Investigation of process parameters on the properties of selective epitaxial growth SiGe structure. SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6. ed. 2010. pp. 171-179 (ECS Transactions; 6).
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Kim, SW, Yoo, JH, Koo, SM & Ko, DH 2010, Investigation of process parameters on the properties of selective epitaxial growth SiGe structure. in SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 edn, ECS Transactions, no. 6, vol. 33, pp. 171-179, 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3487546

Investigation of process parameters on the properties of selective epitaxial growth SiGe structure. / Kim, Sun Wook; Yoo, J. H.; Koo, Sang Mo; Ko, Dae Hong.

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6. ed. 2010. p. 171-179 (ECS Transactions; Vol. 33, No. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kim SW, Yoo JH, Koo SM, Ko DH. Investigation of process parameters on the properties of selective epitaxial growth SiGe structure. In SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. 2010. p. 171-179. (ECS Transactions; 6). https://doi.org/10.1149/1.3487546