This work presents the effect of process parameters such as substrate condition, flow rate of precursors and dopant on selective epitaxial growth (SEG) of Si1-xGex layer in recessed source and drain (S/D) regions of pMOSFET structure. It was observed that the growth rate of SEG Si1-xGex on patterned wafer was slightly less than that of Si1-xGex on bare wafer as GeH4 flow rate increased. And an in-situ boron-doped SiGe layer exhibits lower growth rate and Ge content than intrinsic SiGe layer due to a decrease of GeH4 partial pressure. Nano beam electron diffraction (NBD), which is an efficient method to measure induced compressive strain in Si channel, is applied on both intrinsic and in-situ boron doped Si1-xGex layers with a different Ge content. NBD patterns confirmed that higher Ge concentration introduces more strain in the channel region and in-situ boron doping of Si 1-xGex does not affect the channel strain.