Investigation of process parameters on the properties of selective epitaxial growth SiGe structure

Sun Wook Kim, J. H. Yoo, Sang Mo Koo, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work presents the effect of process parameters such as substrate condition, flow rate of precursors and dopant on selective epitaxial growth (SEG) of Si1-xGex layer in recessed source and drain (S/D) regions of pMOSFET structure. It was observed that the growth rate of SEG Si1-xGex on patterned wafer was slightly less than that of Si1-xGex on bare wafer as GeH4 flow rate increased. And an in-situ boron-doped SiGe layer exhibits lower growth rate and Ge content than intrinsic SiGe layer due to a decrease of GeH4 partial pressure. Nano beam electron diffraction (NBD), which is an efficient method to measure induced compressive strain in Si channel, is applied on both intrinsic and in-situ boron doped Si1-xGex layers with a different Ge content. NBD patterns confirmed that higher Ge concentration introduces more strain in the channel region and in-situ boron doping of Si 1-xGex does not affect the channel strain.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
Pages171-179
Number of pages9
Edition6
DOIs
Publication statusPublished - 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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