Investigation of process parameters on the properties of selective epitaxial growth SiGe structure

Engineering

• Boron 100%
• Strain 66%
• Flow Rate 33%
• Process Parameter 33%
• Electron Diffraction 33%
• Partial Pressure 16%
• Drain Region 16%
• Dopants 16%
• Compressive Strain 16%
• Source Region 16%
• Ge Concentration 16%
• Channel Region 16%
• Low Growth Rate 16%
• Substrates 16%
• Properties 16%
• Measurer 16%
• Growth Rate 16%
• Bare Wafer 16%

Material Science

• Epitaxy 50%
• Doping (Additives) 16%
• Growth Rate 16%
• Diffraction Pattern 16%